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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.33mm |
| Length | 5.2mm |
| Model | BS170-D26Z |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | BS170 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 0.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
onsemi BS170-D26Z is a small signal N-Channel MOSFET designed for general electronic circuit applications requiring low current switching and amplification. This transistor features a maximum continuous drain current of 0.5 A and can handle a maximum drain-source voltage of 60 V, making it suitable for low-power electronic devices.
Packaged in a 3-pin TO-92 case, this device supports through-hole mount technology, enabling easy integration onto printed circuit boards. The device has a low maximum drain-source resistance of 5 ohms, providing efficient conduction during active operation and minimizing power loss.
With a power dissipation limit of 350 mW, the BS170-D26Z ensures stable performance under typical working conditions. Its wide operating temperature range of -55°C to 150°C suits demanding environments including industrial and consumer electronics. The maximum allowable gate-source voltage of 20 V provides flexibility for various drive voltages without risk of gate damage.
The transistor’s single channel configuration and compact size make it adaptable to diverse applications such as signal amplification, switching, and small load driving in circuits used in industrial controls, automation systems, instrumentation, and general electronics.
Engineers and designers may leverage the BS170-D26Z’s robust performance characteristics and standard package form factor for prototyping, repairs, or mass production boards requiring reliable N-Channel MOSFET functionality.
This MOSFET has a low drain-source resistance of 5 ohms, ensuring efficient switching. Maximum power dissipation is rated at 350 mW for reliable thermal performance. Operates within a temperature range from -55°C to 150°C for robust applications.
The maximum gate-source voltage is 20 V allowing for safe gate control. Single transistor configuration with stable N-Channel operation. Compact dimensions of approximately 5.2mm length, 4.19mm width, and 5.33mm height fit standard PCB layouts.
Designed for general-purpose electronic applications including amplification and switching. Browse our Electronics & Electricals category for more semiconductor devices and MOSFETs to complement your projects and manufacturing needs.
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