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DiodesZetex N-Channel MOSFET 15 A 30 V Enhancement Mode Surface Mount 8-Pin TSSOP DMN3020UTS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.02mm |
| Length | 4.5mm |
| Model | DMN3020UTS-13 |
| Width | 3.1mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | TSSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a surface mount 8-pin TSSOP package for compact PCB integration.
- Operates in enhancement mode with low on-resistance for high efficiency.
- Maximum continuous drain current of 15 amperes ensures robust power handling.
- Maximum drain-source voltage of 30 volts suitable for various electronic applications.
- Supports a maximum power dissipation of 1.4 watts for reliable thermal performance.
- Typical gate charge is 27 nanocoulombs at 12 V gate-source voltage for fast switching.
- Operates across a temperature range of -55°C to 150°C for versatility.
- Automotive standard compliant with AEC-Q101 certification ensures quality for automotive use.
Product Description
DiodesZetex DMN3020UTS-13 is an N-Channel MOSFET designed for high efficiency power management applications. It features a surface mount 8-pin TSSOP package, ideal for space-constrained electronic circuits requiring robust current handling and fast switching capabilities.
This MOSFET supports a maximum continuous drain current of 15 A and a drain-source voltage of 30 V, making it well-suited for battery management systems, DC-DC converters, and power management functions. The enhancement mode operation provides a low on-resistance of 50 milliohms to minimize power loss and improve thermal efficiency.
With a maximum power dissipation of 1.4 W and a typical gate charge of 27 nC at 12 V gate-source voltage, the DMN3020UTS-13 delivers reliable switching performance with reduced gate drive requirements. The device is rated for operation from -55°C up to 150°C, supporting a wide range of industrial and automotive environments. It also complies with the AEC-Q101 automotive standard, ensuring suitability for automotive electronics.
Its compact dimensions of 4.5 mm length, 3.1 mm width, and 1.02 mm height enable easy integration into printed circuit boards. Features a surface mount 8-pin TSSOP package for compact PCB integration. Operates in enhancement mode with low on-resistance for high efficiency.
Maximum continuous drain current of 15 amperes supports robust power handling. Maximum drain-source voltage of 30 volts suitable for various electronic circuits. Maximum power dissipation of 1.4 watts ensures reliable thermal management.
Typical gate charge of 27 nanocoulombs enables fast switching with low drive power. Wide operating temperature range from -55°C to 150°C ensures versatility. Complies with AEC-Q101 automotive standard for automotive-grade reliability.
This MOSFET is ideal for industrial, automotive, and power management applications including battery management and DC-DC conversion circuits. Explore more MOSFETs and discrete semiconductor solutions at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the DMN3020UTS-13 is 15 amperes, allowing it to handle robust power requirements in various applications.
This model can handle a maximum drain-source voltage of 30 volts, making it suitable for a range of electronic circuits.
The typical gate charge at a 12V gate-source voltage is 27 nanocoulombs, which facilitates fast switching performance.
The dimensions of this MOSFET are 4.5 mm in length, 3.1 mm in width, and 1.02 mm in height, allowing for compact PCB integration.
The operating temperature range for the DMN3020UTS-13 is from -55°C to 150°C, providing versatility for various environments.
This model supports a maximum power dissipation of 1.4 watts, ensuring reliable thermal performance during operation.
The DMN3020UTS-13 comes in a surface mount 8-pin TSSOP package, ideal for space-constrained applications.
Yes, it complies with the AEC-Q101 automotive standard, ensuring it meets quality requirements for automotive applications.
The channel type of this MOSFET is N-channel, which is common for enhancement mode operation in power management applications.
The maximum gate-source voltage for the DMN3020UTS-13 is 12 volts, which is critical for its operation.
The maximum drain-source resistance for this MOSFET is 50 milliohms, which helps minimize power loss during operation.
This MOSFET is suitable for applications including battery management systems, DC-DC converters, and general power management functions.
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