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onsemi N-Channel MOSFET 65 A, 650 V, Enhancement Mode, 3-Pin TO-247 Package FCH040N65S3
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FCH040N65S3 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | FCH040N65S3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 40mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 417W |
| Typical Gate Charge Qg @ Vgs | 136nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 65 amperes.
- Maximum drain-source voltage of 650 volts ensures robust switching capability.
- Utilizes enhancement mode channel type for efficient operation.
- Low typical gate charge of 136 nC reduces switching losses.
- Maximum power dissipation is 417 watts allowing high power use.
- Built in a TO-247 package, enabling easy through-hole mounting with 3 pins.
- Wide operating temperature range from -55 °C to 150 °C.
- Maximum gate-source voltage rating of 30 volts for safe operation.
Product Description
onsemi FCH040N65S3 is a high voltage N-Channel MOSFET designed for demanding industrial and electronic applications. With a maximum continuous drain current of 65 A and a voltage rating of 650 V, this enhancement mode MOSFET provides reliable high-efficiency switching in power management systems.
It is housed in a robust 3-pin TO-247 package suitable for through-hole mounting, enabling secure PCB integration. Its low typical gate charge of 136 nC optimizes switching performance, reducing losses and improving overall system efficiency.
Operating temperature ranges from -55 °C to 150 °C, making it suitable for harsh environments in industrial, telecommunications, computing, solar inverter, and UPS applications. The maximum power dissipation rating is 417 watts, allowing it to operate safely under heavy loads.
Its physical dimensions - 15.87 mm length, 4.82 mm width, and 20.82 mm height - make it compatible with space-constrained designs. With a maximum gate-source voltage of 30 V and a forward voltage of 1.2 V, it offers stable performance while minimizing conduction losses. Originating from China, it complies with high manufacturing standards.
Supports a maximum continuous drain current of 65 amperes. Maximum drain-source voltage of 650 volts ensures robust switching capability. Utilizes enhancement mode channel type for efficient operation. Low typical gate charge of 136 nC reduces switching losses.
Maximum power dissipation is 417 watts allowing high power use. Built in a TO-247 package, enabling easy through-hole mounting with 3 pins. Wide operating temperature range from -55 °C to 150 °C. Maximum gate-source voltage rating of 30 volts for safe operation.
Compact dimensions with length 15.87 mm, width 4.82 mm, and height 20.82 mm. Origin manufactured in China ensuring quality compliance.
This MOSFET is ideal for use in industrial, computing, telecommunications, solar energy, and UPS power regulation systems where efficiency and durability are critical. Explore a broad range of onsemi products for cutting-edge semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 65 amperes.
This MOSFET has a maximum drain-source voltage rating of 650 volts.
It features a low typical gate charge of 136 nC, which helps reduce switching losses.
The maximum power dissipation for this MOSFET is 417 watts, allowing for high power use.
The physical dimensions are 15.87 mm in length, 4.82 mm in width, and 20.82 mm in height.
It is housed in a TO-247 package, which is suitable for through-hole mounting.
The maximum gate-source voltage rating for this MOSFET is 30 volts.
This model is suitable for industrial, telecommunications, computing, solar inverter, and UPS applications.
This device has a total of 3 pins.
It utilizes an N-channel type with enhancement mode for efficient operation.
The forward voltage for this MOSFET is 1.2 volts.
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