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Infineon IAUT N-Channel Enhancement Mode MOSFET 120A 40V TO-263 8-Pin IAUT300N08S5N014ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUT300N08S5N014ATMA1 |
| Mount Type | Surface |
| Series | IAUT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features a TO-263 package with 8 pins for surface mounting.
- It offers a low maximum on-resistance of 1.4mΩ, ensuring efficient power handling.
- The device supports a maximum gate-source voltage of 20V and typical gate charge of 80nC at Vgs.
- It can dissipate up to 81W of power and operates within a temperature range from -55°C to 175°C.
- Certified to AEC-Q101 automotive standard and RoHS compliant, suitable for automotive electronic systems.
- Forward voltage is 1.1V, optimized for automotive high-reliability applications.
Product Description
Infineon IAUT300N08S5N014ATMA1 is an advanced N-Channel Enhancement mode MOSFET engineered specifically for automotive and industrial electronic applications. It comes in an 8-pin TO-263 surface-mount package to facilitate efficient mounting on PCBs in constrained spaces.
Designed with the cellular planar HEXFET® technology, it provides low on-resistance per silicon area, delivering excellent efficiency and thermal performance. It supports a maximum continuous drain current of 120A and a drain-source voltage rating of 40V, ideal for demanding power switching environments.
The transistor features a maximum drain-source resistance of just 1.4 milliohms, a key metric for reducing conduction losses and improving overall circuit efficiency. Its typical gate charge of 80 nanocoulombs at the specified gate-source voltage enables fast switching capabilities with minimal losses.
This MOSFET can dissipate power up to 81 watts and is rated for reliable operation in harsh temperature conditions ranging from -55°C to 175°C, fulfilling automotive grade reliability requirements. It has a maximum gate-source voltage of 20 volts and a forward voltage of 1.1 volts.
The IAUT300N08S5N014ATMA1 is AEC-Q101 qualified and RoHS compliant, ensuring automotive and environmental standards compliance. It is suitable for use in automotive electronic control modules, power management circuits, and other industrial applications requiring robust and efficient power MOSFET devices.
This MOSFET features a TO-263 surface-mount package with 8 pins suitable for automotive PCB designs. It provides a low Rds(on) resistance of 1.4 milliohms to minimize power losses in high current applications. The gate charge is optimized at 80nC for fast switching and low gate drive requirements.
Designed to operate safely in temperatures from -55°C up to 175°C, suitable for harsh automotive environments. It carries AEC-Q101 automotive standard certification and meets RoHS environmental compliance. Explore more high-performance semiconductor products in the MOSFET category at EnvMart for your automotive and industrial power electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120A.
It has a maximum drain-source voltage rating of 40V.
The maximum drain-source resistance is 1.4 milliohms.
The typical gate charge is 80 nanocoulombs at the specified gate-source voltage.
This MOSFET can dissipate power up to 81 watts.
It operates within a temperature range from -55°C to 175°C.
It comes in a TO-263 surface-mount package with 8 pins.
It is certified to the AEC-Q101 automotive standard.
Yes, it is RoHS compliant, meeting environmental standards.
The maximum gate-source voltage is 20V.
It is suitable for automotive electronic control modules and power management circuits.
The forward voltage is 1.1V.
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