$2.68
$2.60
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon AUIRFS Type P-Channel MOSFET 230 A Drain Current 75 V Drain Source Voltage TO-252 Package AUIRFR5305TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | AUIRFR5305TR |
| Mount Type | Surface |
| Series | AUIRFS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 230A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed with advanced Cellular Planar HEXFET® technology ensuring low on-resistance.
- Supports high maximum power dissipation of 81 W suitable for demanding automotive uses.
- Maximum operating temperature of 175°C for reliability under extreme conditions.
- Includes a 3-pin TO-252 package facilitating integrated surface mounting.
- Complies with RoHS and automotive standard AEC-Q101 for quality assurance.
- Features low gate charge of 80 nC improving switching efficiency.
- Maximum gate-source voltage rated at ±20 V for robust control.
- Forward voltage drop of 1.3 V optimizing conduction losses.
Product Description
Infineon AUIRFR5305TR is a Type P-Channel MOSFET engineered utilizing advanced Cellular Planar HEXFET® Power MOSFET technology to deliver low on-resistance per silicon area. This semiconductor device is designed for automotive applications requiring high reliability, thermal endurance, and efficient power handling.
The device features a maximum continuous drain current of 230 A and can withstand drain-source voltages up to 75 V, making it ideal for switching power management tasks in automotive and industrial environments. Packaged in a 3-pin TO-252 surface mount format, it offers ease of integration into compact printed circuit boards.
With a maximum power dissipation of 81 W and operational temperature capability up to 175°C, the AUIRFR5305TR performs reliably under harsh conditions. Its low gate charge of 80 nC enhances switching speeds and reduces gate drive losses. The MOSFET supports a maximum gate-source voltage rating of ±20 V and exhibits a typical forward voltage of 1.3 V, contributing to improved conduction efficiency.
Compliant with RoHS directives and the automotive industry standard AEC-Q101, this MOSFET assures environmental compliance and automotive-grade quality. It is suitable for applications in automotive power control modules, industrial motor drives, power converters, and other high-current switching systems demanding robust performance.
Designed with advanced Cellular Planar HEXFET® technology ensuring low on-resistance. Supports high maximum power dissipation of 81 W suitable for demanding automotive uses. Maximum operating temperature of 175°C for reliability under extreme conditions.
Includes a 3-pin TO-252 package facilitating integrated surface mounting. Complies with RoHS and automotive standard AEC-Q101 for quality assurance. Features low gate charge of 80 nC improving switching efficiency. Maximum gate-source voltage rated at ±20 V for robust control.
Forward voltage drop of 1.3 V optimizing conduction losses.
Explore more Infineon semiconductor products or browse the MOSFET category at EnvMart for a wide range of advanced electronic components suited for industrial, automotive, and electronic design applications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the AUIRFR5305TR is 230 A.
This P-Channel MOSFET can withstand a maximum drain-source voltage of 75 V.
It supports a maximum power dissipation of 81 W, suitable for demanding applications.
The operating temperature range for the AUIRFR5305TR is from -55°C to 175°C.
The typical gate charge for the AUIRFR5305TR is 80 nC, which improves switching efficiency.
This model is packaged in a 3-pin TO-252 format, facilitating integrated surface mounting.
It complies with the automotive standard AEC-Q101, ensuring quality assurance for automotive applications.
The typical forward voltage drop for the AUIRFR5305TR is 1.3 V, which optimizes conduction losses.
The maximum gate-source voltage rating for the AUIRFR5305TR is ±20 V.
The AUIRFR5305TR is a Type P-Channel MOSFET.
The maximum drain-source resistance (Rds) for the AUIRFR5305TR is 3 mΩ.
The AUIRFR5305TR is manufactured in India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.68
$2.60
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent