Infineon IPD N-Channel MOSFET, 180 A Continuous Drain Current, 40 V Maximum Drain Source Voltage, 3-Pin IPD80R280P7ATMA1

Infineon IPD80R280P7ATMA1 is a power N-channel MOSFET designed to deliver superior performance in high-current switching applications. This device features a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40 V, making it suitable for mid-voltage systems and robust automotive power stages. The MOSFET comes in a TO-252 surface mount package with 3 pins, facilitating compact and efficient PCB layout and excellent thermal dissipation.

Designed to operate over a wide temperature range from -55°C up to +150°C, the IPD80R280P7ATMA1 offers reliability for harsh automotive and industrial environments. Its low on-resistance (Rds(on)) of approximately 1.2 milliohms reduces conduction losses, enabling higher efficiency and lower heat generation during switching. The intrinsic body diode features a forward voltage drop of 0.9 V, important for managing reverse current conduction in switching circuits.

The MOSFET supports a maximum gate-source voltage of 20 V, protecting the gate drive circuit from overvoltage. Its typical gate charge of 80 nC allows for fast switching speeds, which is essential in power management and DC-DC converter applications. The device meets the stringent automotive standard AEC-Q101 and RoHS compliance, underscoring its suitability for automotive-grade designs.

Typical applications for the IPD80R280P7ATMA1 include automotive power distribution modules, electric motor drive stages, load switching in power management systems, and high-current surface-mount device assemblies. The MOSFET's robust characteristics make it a reliable choice for industrial manufacturing, automotive electronics, and demanding power electronics applications.

Supports a maximum continuous drain current of 180 A for heavy current load applications. Features a low drain-source resistance of 1.2 milliohms to minimize conduction losses. Offers a maximum power dissipation of 81 W suitable for sustained high-power operation.

Equipped with a 3-pin TO-252 surface mount package for efficient PCB mounting and thermal management. Operates reliably over a wide temperature range from -55°C to +150°C for harsh industrial and automotive environments.

Includes an intrinsic body diode with a forward voltage of 0.9 V for effective reverse conduction. Maximum gate-source voltage is rated at 20 V, optimizing gate drive design protection. Typical gate charge of 80 nC allows for rapid switching performance in power electronics.

Complies with RoHS standards and automotive AEC-Q101 certification ensuring quality and reliability. Ideal for use in automotive power distribution, DC-DC converters, motor drive stages, and load switching in industrial systems.

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