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Infineon IPZ N-Channel MOSFET, 40 A, 40 V, 8-Pin SuperSO8 Package IPZ40N04S5L2R8ATMA1

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Infineon IPZ N-Channel MOSFET, 40 A, 40 V, 8-Pin SuperSO8 Package IPZ40N04S5L2R8ATMA1

Name: Infineon IPZ N-Channel MOSFET, 40 A, 40 V, 8-Pin SuperSO8 Package IPZ40N04S5L2R8ATMA1
Brand: Infineon
SKU: 300327
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPZ40N04S5L2R8ATMA1
Mount Type	Surface
Series	IPZ
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.4mΩ
Channel Mode	N
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

This MOSFET is designed for automotive applications, featuring OptiMOS power technology.
It has a logic level N-channel enhancement mode configuration.
The device is 100% avalanche tested to ensure reliability and ruggedness.
Maximum drain-source resistance is 1.4 milliohms, providing low conduction losses.
It supports a typical gate charge of 80 nC at 8 V gate-source voltage.
The maximum power dissipation rating is 81 W, allowing robust operation.
Operating temperature range spans from -55°C to 175°C, suitable for harsh environments.
Compliant with RoHS and qualified to automotive standard AEC-Q101.

Product Description

Infineon IPZ40N04S5L2R8ATMA1 is a high-performance N-Channel MOSFET optimized for automotive and industrial power switching applications. Featuring the advanced OptiMOS technology, it delivers low on-resistance and high efficiency in a compact 8-pin SuperSO8 package measuring 5 x 6 mm.

This MOSFET supports a maximum continuous drain current of 40 A and a maximum drain-source voltage of 40 V, making it suitable for medium power circuits requiring fast switching and low conduction loss. It operates at a maximum power dissipation of 81 W and withstands high temperature environments up to 175°C.

The device is logic level compatible with a gate source voltage maximum of 20 V, and a typical gate charge of 80 nC ensuring efficient drive requirements. Its low forward voltage drop of 1.1 V further enhances performance in switching applications.

Certified compliant with RoHS and qualified according to AEC-Q101 standards, this MOSFET ensures reliability in automotive electronics. The device is 100% avalanche tested, guaranteeing ruggedness against voltage spikes and transient conditions encountered in real-world operation.

Due to its surface mount package and low profile, the IPZ40N04S5L2R8ATMA1 is ideal for compact, high-density PCB designs in automotive control units, power management, industrial equipment, and consumer electronics.

This MOSFET is designed for automotive applications, featuring OptiMOS power technology. It has a logic level N-channel enhancement mode configuration. The device is 100% avalanche tested to ensure reliability and ruggedness.

Maximum drain-source resistance is 1.4 milliohms, providing low conduction losses. It supports a typical gate charge of 80 nC at 8 V gate-source voltage. The maximum power dissipation rating is 81 W, allowing robust operation.

Operating temperature range spans from -55°C to 175°C, suitable for harsh environments. Compliant with RoHS and qualified to automotive standard AEC-Q101. Explore more automotive-grade MOSFETs and power semiconductor components on EnvMart for your industrial and design needs.