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Infineon IAUC N-Channel MOSFET, 20 V, 80 A, 81 W Power Dissipation, 1.4 mΩ Rds(on), 8-Pin SuperSO8 5x6 IAUC80N04S6N036ATMA1

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Infineon IAUC N-Channel MOSFET, 20 V, 80 A, 81 W Power Dissipation, 1.4 mΩ Rds(on), 8-Pin SuperSO8 5x6 IAUC80N04S6N036ATMA1

Name: Infineon IAUC N-Channel MOSFET, 20 V, 80 A, 81 W Power Dissipation, 1.4 mΩ Rds(on), 8-Pin SuperSO8 5x6 IAUC80N04S6N036ATMA1
Brand: Infineon
SKU: 300322
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IAUC80N04S6N036ATMA1
Mount Type	Surface
Series	IAUC
Maximum Operating Temperature	175°C
Package Type	SuperSO8 5 x 6
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	80A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	1.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

This MOSFET operates in enhancement mode with a very low on-state resistance of 1.4 milliohms.
It supports a maximum power dissipation of 81 watts, suitable for heavy switching loads.
The device has a typical gate charge of 80 nC, allowing predictable gate drive requirements.
It is supplied in an 8-pin SuperSO8 5 x 6 mm surface-mount package for compact PCB integration.
Designed to operate reliably from -55°C up to 175°C for automotive and industrial applications.
Complies with RoHS standards and meets automotive quality AEC-Q101 qualification.
Ideal for DC-DC converters, motor drives, battery protection, and power distribution systems.

Product Description

Infineon IAUC80N04S6N036ATMA1 is an N-channel enhancement mode MOSFET designed for high-current and robust switching applications. It features a maximum continuous drain current of 80 A and maximum drain-source voltage of 20 V, making it suitable for low-voltage power management systems.

The device is housed in an 8-pin SuperSO8 5 x 6 mm surface-mount package optimized for compact circuit layouts and efficient thermal management on PCBs. With a low Rds(on) of 1.4 mΩ and maximum power dissipation of 81 W, this MOSFET effectively reduces conduction losses and supports heavy switching loads.

Its gate charge is 80 nC at Vgs, which requires appropriate gate driver current to achieve fast and efficient switching, minimizing switching losses. The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, meeting the rigorous demands of automotive environments and industrial electronics.

Manufactured to comply with RoHS and automotive AEC-Q101 standards, this MOSFET ensures quality and environmental compliance. Typical applications include DC-DC converter stages in automotive power systems, motor drive circuits in auxiliary vehicle electronics, battery protection modules, and power distribution networks requiring high reliability and low losses.

This MOSFET delivers a continuous drain current of 80 A at 20 V. SuperSO8 5 x 6 mm package ensures compact, surface-mount PCB fitting. Low drain-source resistance of 1.4 milliohms minimizes conduction losses. High power dissipation rating of 81 watts supports demanding switching applications.

Wide operating temperature from -55°C to 175°C enables use in harsh environments. Typical gate charge of 80 nC enables controlled switching with proper gate drive. AEC-Q101 automotive qualification certifies suitability for vehicle electronics.

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