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Infineon Dual N Channel Normal Level Enhancement Mode MOSFET, 16 A, 100 V, 8-Pin SuperSO8 IPG16N10S461ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPG16N10S461ATMA1 |
| Mount Type | Surface Mount |
| Series | IPG16N10S4-61 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, AEC Q101 |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 100V |
| Channel Mode | Dual N |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Dual N Channel Normal Level Enhancement Mode |
Key Features
- This MOSFET features dual N channel normal level enhancement mode transistors for efficient switching.
- The package type is SuperSO8 with dimensions of 5 x 6 mm supporting surface mount technology.
- Maximum continuous drain current is 16 amperes for robust power handling.
- Drain to source voltage rating is 100 volts, suitable for medium voltage applications.
- Typical gate charge is 5.4 nC at Vgs, enabling fast switching performance.
- Maximum power dissipation of 29 W supports reliable operation in demanding environments.
- Operating temperature ranges from -55 °C to 175 °C, supporting automotive and industrial applications.
- It is RoHS and AEC Q101 qualified, indicating compliance with environmental and automotive standards.
Product Description
Infineon's IPG16N10S461ATMA1 is a Dual N Channel Normal Level Enhancement Mode MOSFET designed for robust power switching applications requiring efficient performance and reliability.
This MOSFET supports a maximum continuous drain current of 16 A and a maximum drain to source voltage of 100 V, making it suitable for medium power electronics, automotive, and industrial control systems.
Designed in a SuperSO8 8-pin surface mount package measuring 5 x 6 mm, it provides an optimal balance between size and thermal dissipation capabilities. The device features a typical gate charge of 5.4 nC at Vgs, allowing rapid switching speeds essential for high-frequency converters and motor controllers.
With a maximum power dissipation of 29 W and operational temperature range between -55 °C and 175 °C, it meets stringent automotive standards (AEC-Q101) and is RoHS compliant, ensuring environmentally friendly manufacturing.
The transistor configuration includes dual N channel transistors with normal level logic enhancement mode operation, suitable for a broad range of switching and amplification roles in electronic circuits.
This MOSFET is ideal for use in automotive electronics, industrial power supplies, and general electronics applications requiring durable and efficient semiconductor components. This MOSFET features dual N channel normal level enhancement mode transistors for efficient switching.
The package type is SuperSO8 with dimensions of 5 x 6 mm supporting surface mount technology. Maximum continuous drain current is 16 amperes for robust power handling. Drain to source voltage rating is 100 volts, suitable for medium voltage applications.
Typical gate charge is 5.4 nC at Vgs, enabling fast switching performance. Maximum power dissipation of 29 W supports reliable operation in demanding environments. Operating temperature ranges from -55 °C to 175 °C, supporting automotive and industrial applications.
It is RoHS and AEC Q101 qualified, indicating compliance with environmental and automotive standards. Transistor configuration is dual N channel, designed for normal level logic operation. Pin count is 8, suited for compact PCB layouts and efficient thermal management.
Explore the broad range of Infineon MOSFETs within the Electronics & Electricals category at EnvMart for quality semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
This MOSFET has a drain to source voltage rating of 100 V, making it suitable for medium voltage applications.
The package type is SuperSO8, with dimensions of 5 x 6 mm.
The typical gate charge at Vgs for this model is 5.4 nC.
This model supports a maximum power dissipation of 29 W.
The operational temperature range for this MOSFET is from -55 °C to 175 °C.
It supports surface mount technology.
This MOSFET is RoHS and AEC-Q101 qualified, indicating compliance with environmental and automotive standards.
This model has 8 pins, suitable for compact PCB layouts.
The transistor configuration is dual N channel, designed for normal level logic enhancement mode operation.
It meets the AEC-Q101 automotive standard.
The channel type is N, specifically designed for dual N channel operation.
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