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Infineon iPB N-Channel MOSFET 273 A 100 V P Channel Surface Mount TO-263 3-Pin IPB020N08N5ATMA1

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Infineon iPB N-Channel MOSFET 273 A 100 V P Channel Surface Mount TO-263 3-Pin IPB020N08N5ATMA1

Name: Infineon iPB N-Channel MOSFET 273 A 100 V P Channel Surface Mount TO-263 3-Pin IPB020N08N5ATMA1
Brand: Infineon
SKU: 300260
Price: 3.02 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPB020N08N5ATMA1
Mount Type	Surface
Series	iPB
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	273A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	1.7mΩ
Channel Mode	P
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Supports a maximum continuous drain current of 273 A.
Maximum drain-source voltage rated at 100 V.
Features a low drain-source resistance of 1.7 milliohms for efficient conduction.
Typical gate charge at 80 nC ensures fast switching capability.
High maximum power dissipation of 81 W for robust performance.
Comes in a compact TO-263 package suitable for surface mounting.
Equipped with 3 pins for easy integration in circuits.
Designed for synchronous rectification with output capacitance reduction up to 44%.

Product Description

Infineon IPB020N08N5ATMA1 N-Channel MOSFET is engineered for precise, high-frequency switching in power electronics, providing outstanding gate charge performance and durable operation up to 175°C.

Constructed in a TO-263 (D2PAK) surface mount package with 3 pins, this MOSFET supports a maximum continuous drain current of 273 A and a maximum drain-source voltage of 100 V, making it ideal for power switching and control in automotive, industrial, and consumer electronics.

Its low drain-source resistance of 1.7 mΩ enables efficient conduction with minimal power loss, while the typical gate charge of 80 nC contributes to rapid switching speeds, optimizing overall system efficiency.

The device's robust power dissipation capacity of 81 W ensures reliable performance under demanding conditions. It supports a wide operating temperature range from -55°C to 175°C, suitable for harsh industrial and automotive environments.

The Infineon IPB020N08N5ATMA1 is optimized for synchronous rectification applications with a reduction in output capacitance of up to 44%, enhancing switching performance and minimizing losses.

This MOSFET complies with RoHS standards, reinforcing its suitability for modern environmentally conscious designs. It features a gate-source maximum voltage of 20 V and a forward voltage of 1.1 V, making it adaptable for a variety of circuit designs.

Supports a maximum continuous drain current of 273 A. Maximum drain-source voltage rated at 100 V. Features a low drain-source resistance of 1.7 milliohms for efficient conduction. Typical gate charge at 80 nC ensures fast switching capability.

High maximum power dissipation of 81 W for robust performance. Operates within a wide temperature range: -55°C to 175°C. Comes in a compact TO-263 package suitable for surface mounting. Equipped with 3 pins for easy integration in circuits.

Designed for synchronous rectification with output capacitance reduction up to 44%. RoHS compliant, ensuring environmental safety.

This Infineon MOSFET is suitable for industrial, automotive, power management, and electronic manufacturing applications where reliable high-power switching devices are required. Discover more components and explore our Semiconductors category for additional electronic solutions tailored to your needs.