Infineon N-Channel MOSFET 80 A, 20 V Enhancement Mode, 8-Pin SuperSO8 5x6 Surface Mount IAUC80N04S6N036ATMA1

Infineon IAUC80N04S6N036ATMA1 N-Channel MOSFET is a robust power switching transistor designed for high-current surface mount applications where thermal and electrical reliability is critical. It delivers a continuous drain current of 80 A and withstands maximum drain-source voltages of up to 20 V. The device operates in enhancement mode and is packaged in an 8-pin SuperSO8 5x6 surface mount form factor, optimized for space-saving PCB layouts.

This MOSFET is highly suitable for use in automotive electronics, industrial power management modules, and motor-drive stages requiring efficient switching and thermal performance. With a low typical drain-source resistance (RDS(on)) of 1.4 mΩ, conduction losses are minimized, increasing overall system efficiency.

The device supports a wide operating temperature range from -55°C up to a maximum of 175°C, enabling installation near heat-generating components and in challenging ambient conditions common in vehicle engine compartments. Its maximum power dissipation rating of 81 W further supports heavy switching loads.

Gate drive requirements are predictable due to a typical total gate charge of 80 nC, facilitating proper current sourcing and sinking from gate drivers to balance switching speed and losses. Electrical limitations include maximum gate-to-source and drain-to-source voltages of 20 V each.

Additional advantages include RoHS compliance and automotive-grade qualification to the AEC-Q101 standard, making this MOSFET ideal for automotive and industrial applications requiring stringent quality and reliability levels.

This MOSFET operates in enhancement mode with a typical gate charge of 80 nC allowing efficient switching. It features a low on-resistance of 1.4 milliohms to minimize conduction losses during operation. The SuperSO8 5x6 package with 8 pins enables compact surface mounting with effective thermal management.

Maximum power dissipation is 81 W, supporting heavy switching loads in automotive and industrial applications. Operating temperature ranges from -55°C to 175°C, suitable for harsh environments including engine bays. Gate-to-source and drain-to-source voltages are both rated to 20 V, ensuring compatibility with low-voltage systems.

The device is RoHS compliant and meets the automotive AEC-Q101 standard for reliability. Typical forward voltage drop is 1.1 V, supporting efficient power handling.

Explore the Infineon brand and comprehensive MOSFET range at EnvMart for high-quality semiconductor components suited to demanding industrial, automotive, and power management applications.