Infineon N-Channel MOSFET 381 A Max Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin SuperSO8 BSC0904NSIATMA1

The Infineon BSC0904NSIATMA1 is a high-performance N-Channel MOSFET designed specifically for power applications requiring high continuous current capacity of 381 amperes and a drain source voltage rating of 40 volts. Packaged in an 8-pin SuperSO8 form factor measuring 5 x 6 mm, this device provides an optimal balance of low on-resistance (0.7 milliohm) and fast switching capabilities, thanks to its typical gate charge of 80 nanocoulombs at the gate-source voltage.

Featuring Infineon's OptiMOS technology, this MOSFET integrates a monolithic Schottky-like diode that reduces switching losses and improves efficiency in synchronous buck converter circuits. The device supports a maximum power dissipation of 81 watts, allowing it to handle demanding loads reliably within a broad operating temperature window from -55°C to 175°C, suitable for harsh industrial environments.

Its surface mount SuperSO8 package supports compact printed circuit board designs where space saving is crucial while maintaining excellent thermal resistance. Additionally, the MOSFET is halogen-free, Pb-free, and RoHS compliant, aligning with environmental and safety regulations.

Applications for this MOSFET include high-performance power conversion, industrial power supplies, motor drives, and automotive electronics where efficient current handling and reliability are paramount. The forward voltage drop of 1 V contributes to reduced conduction losses and improved overall system efficiency.

Optimized OptiMOS power MOSFET technology for efficient power conversion. Integrated monolithic Schottky-like diode for lowered switching losses. Low maximum drain source resistance (0.7 mΩ) for minimal conduction losses.

High maximum continuous drain current of 381 amperes. Surface mount SuperSO8 8-pin package with compact dimensions. Wide operating temperature range between -55°C and 175°C. RoHS compliant, Pb-free, and halogen-free materials.

Maximum power dissipation of 81 watts for reliable thermal performance. Typical gate charge of 80 nC for fast switching applications.

This MOSFET is suitable for demanding industrial, automotive, and electronic power management applications. Explore more Infineon power semiconductor solutions in the MOSFET category at EnvMart to enhance performance and reliability in your designs.