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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package PMV13XNEAR

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Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package PMV13XNEAR

Name: Nexperia N-Channel MOSFET, 10.3 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 Package PMV13XNEAR
Brand: Nexperia
SKU: 299909
Price: 0.21 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PMV13XNEAR
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Maximum Power Dissipation Pd	81W
Maximum Gate Source Voltage Vgs	20V

Key Features

Utilizes trench MOSFET technology for enhanced performance.
Low threshold voltage enables efficient operation at low drive voltages.
Extended operating temperature range up to 175 °C.
Maximum drain source resistance of 13.6 mΩ ensures low conduction losses.
Supports high-speed switching applications including DC to DC conversion.
Compact surface mount SOT-23 package suitable for space-constrained designs.
Maximum power dissipation rated at 81 W for robust thermal handling.
Maximum gate source voltage of 20 V protects device reliability.

Product Description

The Nexperia PMV13XNEAR is a high-performance N-channel enhancement mode MOSFET designed for efficient switching in compact electronic circuits. Featuring trench MOSFET technology, it offers low threshold voltage and low on-resistance, which contribute to reduced conduction losses and improved power efficiency.

Encased in a small 3-pin SOT-23 surface-mount plastic package, the device is suitable for space-constrained applications in electronics, power management, and semiconductor devices.

With a continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, this MOSFET supports demanding applications such as DC to DC converters, high-speed line drivers, and low-side load switches. Its low gate charge facilitates fast switching speeds, making it ideal for power-efficient and high-frequency circuits.

The device can operate safely across an extended temperature range from -55 °C to 175 °C, enhancing reliability in harsh industrial, automotive, and consumer electronics environments. The maximum power dissipation rating of 81 W ensures robust thermal handling for sustained operation.

Trench MOSFET technology for superior performance. Low threshold voltage for efficient low-voltage drive. Extended temperature range suitable for industrial and automotive use. Compact SOT-23 package for surface-mount applications.

Maximum continuous drain current of 10.3 A with 30 V drain-source voltage. Maximum power dissipation of 81 W. Maximum gate-source voltage of 20 V to safeguard device operation. Low on-resistance of 13.6 mΩ reduces power losses.

Applications include DC to DC converters, switching circuits, and line drivers.

This MOSFET is suitable for use in electronic components, power & connectors, and semiconductor manufacturing sectors, enhancing power efficiency and device longevity. It is ideal for electronic assembly, industrial automation, and consumer electronics design.

Choose Nexperia PMV13XNEAR for reliable, high-efficiency MOSFET performance in demanding and compact circuit designs. Explore our catalog for more semiconductor and discrete electronic components optimized for various industry applications.