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Infineon ISP Type P-Channel MOSFET, 3-Pin SOT-223 Package, -3.70 A Id, 60 V Vds, 81 W Pd ISP650P06NMXTSA1

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Infineon ISP Type P-Channel MOSFET, 3-Pin SOT-223 Package, -3.70 A Id, 60 V Vds, 81 W Pd ISP650P06NMXTSA1

Name: Infineon ISP Type P-Channel MOSFET, 3-Pin SOT-223 Package, -3.70 A Id, 60 V Vds, 81 W Pd ISP650P06NMXTSA1
Brand: Infineon
SKU: 300258
Price: 0.83 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	ISP650P06NMXTSA1
Mount Type	Surface
Series	ISP
Maximum Operating Temperature	+150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	-3.70A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	65mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Surface-mount technology with SOT-223 package for compact PCB designs.
Enhancement mode type P channel MOSFET ideal for switching applications.
Maximum power dissipation of 81 W to handle significant power loads.
Low maximum drain-source resistance of 65 mΩ for efficient conduction.
Operating temperature range from -55 °C to +150 °C for extended thermal tolerance.
Typical gate charge of 80 nC enabling fast switching performance.
Rated maximum gate-source voltage of ±20 V for robust gate control.
Forward voltage of 1.1 V supports low voltage drop in conduction.

Product Description

Infineon ISP650P06NMXTSA1 is a high-performance P-Channel MOSFET designed for surface mount applications, housed in a compact 3-pin SOT-223 package. It supports a maximum continuous drain current of -3.70 A and a drain-source voltage of 60 V, making it suitable for power switching and amplification tasks in electronics and electrical circuits.

This MOSFET is built with enhancement mode technology and offers a low drain-source resistance of 65 mΩ, reducing power losses and improving efficiency. Its typical gate charge of 80 nC and a maximum gate-source voltage of 20 V allow for reliable and fast switching performance, important in high-frequency and PWM circuits.

The device operates over a wide temperature range from -55 °C to +150 °C which ensures durability in various environmental conditions, including automotive and industrial applications. With a maximum power dissipation rating of 81 W, it can handle moderate power levels comfortably, suitable for power supply circuits and driver stages.

Features like Pb-free lead plating align with environmental standards. The product complies with RoHS directives and meets automotive AEC-Q101 standards, certifying its reliability and safety in automotive electronics.

Surface-mount SOT-223 package enables space-saving PCB layouts. Type P channel with enhancement mode operation for versatile switching. Drains current of up to -3.70 A continuously, supporting moderate power loads. Low resistance of 65 mΩ minimizes conduction losses and thermal buildup.

Wide operating temperature range ensures application in harsh conditions. Robust gate control with ±20 V maximum gate-source voltage rating. Compliance with RoHS and AEC-Q101 automotive standard ensures quality and regulatory adherence.

This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring reliable switching, efficient power handling, and compliance with stringent environmental and quality standards.

Browse the Electronics & Electricals category at EnvMart for more semiconductor components like MOSFETs and other discrete semiconductors for your projects and manufacturing needs.