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Vishay 120 V 6 A Schottky Barrier Schottky DPAK Surface Mount Diode V6PWM12HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | V6PWM12HM3/I |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 6A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 0.63V |
Key Features
- Trench MOS barrier Schottky technology ensures low forward voltage drop and high efficiency.
- Very low profile surface mount design with typical height of 1.3 mm.
- Maximum operating temperature up to 175°C for reliable industrial use.
- Peak non-repetitive forward surge current of 100 A supports transient loads.
- Automotive standard qualified (AEC-Q101) ensuring high quality and ruggedness.
- Ideal for low voltage, high frequency DC/DC conversion and freewheeling diode applications.
- Meets RoHS compliance for environmentally friendly manufacturing.
- Single diode configuration in a compact TO-252 package for automated PCB assembly.
Product Description
Vishay V6PWM12HM3/I is a surface mount Schottky Barrier Diode designed for industrial and automotive applications requiring high current and fast switching performance.
This trench MOS barrier schottky rectifier supports a maximum continuous forward current of 6 A and a peak reverse repetitive voltage of 120 V, packaged in the standard TO-252 (DPAK) form factor.
Its trench MOS technology provides very low forward voltage drop (typical 0.63 V), resulting in reduced power loss and efficient operation in power management circuits such as low voltage high frequency DC/DC converters and polarity protection setups.
The device withstands a peak non-repetitive forward surge current up to 100 A, making it robust for transient conditions in industrial and automotive systems. It operates reliably over a wide temperature range from -40°C up to 175°C, with qualification to AEC-Q101 automotive standards confirming its ruggedness.
The V6PWM12HM3/I diode's compact and very low profile package height of 1.3 mm aids in automated placement and thermal management on PCBs, ensuring design flexibility in power electronic assemblies.
Trench MOS barrier Schottky technology for low forward voltage and power loss. Compact TO-252 (DPAK) surface mount package with automated assembly compatibility. High current capability with 6 A continuous forward current and 100 A surge current.
Wide operating temperature range from -40°C to 175°C for industrial grade applications. Automotive standard AEC-Q101 qualification for enhanced reliability. RoHS compliant ensuring eco-friendly manufacturing and usage. Single diode configuration ideally suited for power rectification tasks.
Peak reverse repetitive voltage rating of 120 V suits various power circuits. Widely used in DC/DC converters, freewheeling diodes, and polarity protection circuits. Choose Vishay V6PWM12HM3/I for efficient power rectification in industrial, automotive, and electronic equipment requiring reliable, high-performance Schottky diodes.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current for this diode is 6 A.
The peak reverse repetitive voltage rating is 120 V.
This model can operate at a maximum temperature of 175°C.
It comes in a TO-252 (DPAK) surface mount package.
The typical forward voltage drop is 0.63 V.
The diode supports a peak non-repetitive forward surge current of 100 A.
It operates reliably over a temperature range from -40°C to 175°C.
Yes, it is qualified to the AEC-Q101 automotive standard.
The diode meets RoHS compliance for environmentally friendly manufacturing.
It is suitable for low voltage, high frequency DC/DC conversion and freewheeling diode applications.
It has a single diode configuration.
The country of origin for this diode is India.
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