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Infineon N-Channel MOSFET 253 A Continuous Drain Current 30 V PQFN 8-Pin IQE006NE2LM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE006NE2LM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 730mV |
Key Features
- Designed for surface mount applications with a compact PQFN package.
- Low maximum drain-source resistance of 1.2 milliohm ensures efficient power handling.
- Typical gate charge of 80 nanocoulombs supports fast switching performance.
- Maximum power dissipation rating of 81 watts for robust thermal management.
- Operational temperature range from -55°C to 175°C suitable for industrial use.
- Forward voltage drop of 730 millivolts enables energy-efficient conduction.
- Complies with RoHS and automotive standard AEC-Q101 for quality assurance.
Product Description
Infineon IQE006NE2LM5ATMA1 is a N-Channel MOSFET designed with OptiMOS 5 technology that provides very low on resistance and high current handling capability suitable for demanding applications.
This power MOSFET supports a continuous drain current up to 253 A and a maximum drain-source voltage of 30 V, housed in an 8-pin PQFN surface-mount package. With a maximum power dissipation of 81 W, it can handle substantial load conditions reliably.
The device operates efficiently with a low forward voltage of 730 mV and a typical gate charge of 80 nC, ensuring fast switching and low conduction losses. Its rated maximum gate-source voltage is 20 V, and it withstands operating temperatures from -55°C to 175°C, making it well-suited for automotive and industrial environments.The MOSFET is fully qualified according to JEDEC standards and complies with RoHS environmental regulations and the AEC-Q101 automotive standard, underscoring its quality and reliability.
Its compact 3.3 mm length PQFN package facilitates integration into dense circuit boards where space and thermal performance are critical factors. Applications for the Infineon IQE006NE2LM5ATMA1 include power management in industrial equipment, automotive electronics, DC-DC converters, and high-speed motor control systems.
Designed for surface mount applications with a compact PQFN package. Low maximum drain-source resistance of 1.2 milliohm ensures efficient power handling. Typical gate charge of 80 nanocoulombs supports fast switching performance.
Maximum power dissipation rating of 81 watts for robust thermal management. Operational temperature range from -55°C to 175°C suitable for industrial use. Forward voltage drop of 730 millivolts enables energy-efficient conduction.
Complies with RoHS and automotive standard AEC-Q101 for quality assurance. Length dimension of 3.3 mm supports compact circuit designs. Explore Infineon's range of Power MOSFETs on EnvMart to find advanced semiconductor solutions for your electronic design needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 253 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge is 80 nanocoulombs (nC).
The maximum power dissipation rating is 81 watts.
It operates efficiently within a temperature range of -55°C to 175°C.
The forward voltage drop is 730 millivolts (mV).
This device is housed in an 8-pin PQFN surface-mount package.
It complies with RoHS environmental regulations and the AEC-Q101 automotive standard.
The maximum gate-source voltage is rated at 20 V.
The length dimension is 3.3 mm, which supports compact circuit designs.
The maximum drain-source resistance is 1.2 milliohm (mΩ).
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