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Infineon IPL N-Channel MOSFET, 9.4 A Continuous Drain Current, 700 V Drain Source Voltage, 5-Pin ThinPAK IPLK70R750P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R750P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- The ThinPAK 5x6 package features a compact 5x6 mm footprint with low 1 mm profile height.
- Provides extremely low losses and excellent thermal performance for enhanced efficiency.
- Includes integrated ESD protection diode ensuring robustness in industrial environments.
- Fully qualified according to JEDEC standards for industrial applications.
- Optimized for flyback topology power converters with low switching losses (Eoss).
- Wide range of RDS(on) values allows flexible design options.
- Low electromagnetic interference (EMI) characteristics for improved noise management.
- Has automotive-grade AEC-Q101 certification for automotive and industrial use.
Product Description
Infineon IPLK70R750P7ATMA1 is a high-performance N-Channel MOSFET designed in a ThinPAK 5x6 package, characterized by a very small footprint of 5x6 mm and a low profile of 1 mm height. This compact package size combined with benchmark low parasitic elements significantly increases power density and reduces overall form factor.
Engineered primarily for flyback topology power converters, this 700 V CoolMOS™ P7 series device excels with extremely low losses and excellent thermal behavior, making it highly efficient for industrial power management applications.
The MOSFET integrates an ESD protection diode to enhance device ruggedness and features low switching losses (Eoss), contributing to improved energy efficiency and reliability in operation. It has been fully qualified according to JEDEC standards for industrial applications, ensuring high quality and reliability.
The device presents a very wide range of RDS(on) values for varying design requirements and exhibits low electromagnetic interference (EMI), which is critical in sensitive electronics and industrial control systems. Automotive standard AEC-Q101 certification further attests to its suitability in automotive power electronics as well as demanding industrial environments.
Electrical characteristics include a maximum continuous drain current of 9.4 A and a maximum drain-source voltage rating of 700 V. The device supports a maximum power dissipation of 25.5 W and can reliably operate across a temperature range from -55°C to 150°C.
Packaging with surface mount technology and a 5-pin configuration facilitates efficient PCB assembly and compact system integration. This MOSFET is an excellent choice for use in industrial, power supply, automotive, and electronic component manufacturing applications.
The ThinPAK 5x6 compact package enables small form factor power electronics design. Low parasitic and losses enhance overall efficiency and thermal management. Integrated ESD diode protects against electrostatic discharge damage.
Meets JEDEC standards ensuring industrial-grade quality and reliability. Low EMI design supports noise-sensitive applications. Wide temperature range ensures robust performance in harsh environments. Automotive grade with AEC-Q101 certification suitable for automotive systems.
Explore more high-quality semiconductor components under the MOSFET category on EnvMart to find the perfect match for your industrial and commercial electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
This MOSFET has a maximum drain-source voltage rating of 700 V.
It comes in a ThinPAK 5x6 package with a footprint of 5x6 mm and a profile height of 1 mm.
The device can operate within a temperature range of -55°C to 150°C.
The maximum power dissipation for this MOSFET is 25.5 W.
This model is designed for surface mounting.
Yes, it integrates an ESD protection diode to enhance device ruggedness.
It complies with the automotive standard AEC-Q101.
The typical gate charge at Vgs is 80 nC.
The maximum drain-source resistance (RDS(on)) is 1.2 mΩ.
It is fully qualified according to JEDEC standards and is RoHS compliant.
This model is optimized for flyback topology power converters and industrial power management applications.
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