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Infineon BSC0 N-Channel MOSFET, 381 A, 60 V, 8-Pin TDSON BSC027N06LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC027N06LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for efficient surface-mount applications requiring high current capacity.
- Low on-resistance of 0.7 milliohm reduces conduction losses under heavy load.
- Capable of dissipating up to 81 W, providing significant thermal headroom.
- Typical gate charge is 80 nC at a gate-source voltage of 20 V, enabling faster switching.
- Forward diode voltage of 1.2 V minimizes recovery stress during commutation.
- Operates reliably over a wide temperature range from -55°C to +150°C.
- Complies with RoHS standards for environmental safety.
- Ideal for high-current motor drivers, synchronous rectification, and battery management systems.
Product Description
Infineon BSC027N06LS5ATMA1 is a high-current N-Channel MOSFET designed for demanding surface-mount power applications. It provides a robust maximum continuous drain current of 381 A and a maximum drain-source voltage rating of 60 V, packaged in a compact 8-Pin TDSON package for easy integration into compact board layouts.
This MOSFET features very low on-resistance of 0.7 milliohm, which substantially reduces conduction losses and improves overall efficiency in power stages. Its maximum power dissipation of 81 W offers significant thermal tolerance, making it suitable for applications requiring sustained high current and efficient thermal management.
The device has a typical gate charge of 80 nC at a gate-source voltage up to 20 V, supporting fast switching speeds with moderate gate drive. The forward diode voltage of 1.2 V helps reduce peak reverse recovery stress during switching, which is beneficial for design reliability, especially in circuits employing synchronous rectification.
Operating temperature range spans from -55°C to +150°C, allowing this device to withstand extreme environmental conditions commonly encountered in industrial, automotive, and power management applications.
The Infineon BSC0 series MOSFET is RoHS compliant, ensuring environmental safety compliance for electronic equipment manufacturing. It is ideal for use in high-current motor driver stages, synchronous rectification in power converters, battery management systems requiring low conduction loss, and switch stages of DC-DC power modules.
Designed for efficient surface-mount power switching applications. Low Rds(on) value helps in reducing power dissipation. High current capacity suitable for motor drive and power conversion. Wide operating temperature range supports varied industrial uses.
Complies with environmental standards for safe deployment. Compact 8-Pin TDSON packaging for optimized board layout. Optimized gate charge for balanced switching speed and power efficiency. Minimized diode forward voltage to reduce switching losses.
This MOSFET is an excellent choice for industrial electronics, power management, and automotive applications demanding efficient and robust switching solutions. Explore more Infineon products and MOSFETs on EnvMart for high performance and reliability.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon BSC027N06LS5ATMA1 is 381 A.
It has a maximum drain-source voltage rating of 60 V.
The on-resistance is 0.7 milliohm, which helps reduce conduction losses.
The typical gate charge is 80 nC at a gate-source voltage of 20 V.
It can dissipate up to 81 W, providing significant thermal headroom.
The operating temperature range is from -55°C to +150°C.
It is packaged in a compact 8-Pin TDSON format for easy integration.
The forward diode voltage is 1.2 V, which helps minimize recovery stress during commutation.
Yes, it complies with RoHS standards for environmental safety.
This model is ideal for high-current motor drivers, synchronous rectification, and battery management systems.
It is designed for surface-mount applications.
This MOSFET belongs to the BSC0 series by Infineon.
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