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Infineon BSC0 N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain Source Voltage 8-Pin SuperSO8 BSC022N04LS6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC022N04LS6ATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports a maximum continuous drain current of 381 amperes.
  • Maximum drain source voltage rating of 40 volts.
  • Low on-resistance of 0.7 milliohms minimizes conduction losses.
  • Typical gate charge of 80 nanocoulombs allows fast switching.
  • Power dissipation capability up to 81 watts.
  • Wide operating temperature range from -55°C to 175°C ensures thermal resilience.
  • Optimized for surface mount PCB assembly in a compact SuperSO8 5 x 6 mm package.
  • Gate source voltage maximum rating of 20 volts for extensive gate-drive headroom.

Product Description

Infineon BSC022N04LS6ATMA1 is a high-performance N-Channel MOSFET designed for demanding power switching and conversion applications. Featuring a maximum continuous drain current of 381 amperes and a drain source voltage of 40 volts, this transistor is engineered to deliver low conduction losses and high thermal performance. Packaged in a compact 8-pin SuperSO8 5 x 6 mm surface mount format, it facilitates efficient automated PCB assembly.

Operating efficiently across a wide temperature range from -55°C up to 175°C, this MOSFET is suitable for use in thermally stressed environments. The device exhibits a very low typical on-resistance of 0.7 milliohms, which minimizes power dissipation and heat generation during high current switching. Its typical gate charge of 80 nanocoulombs supports fast switching speeds while maintaining efficiency.

The maximum power dissipation rating of 81 watts allows for substantial thermal loading, making it ideal for power supplies, motor drive stages, synchronous rectification in DC-DC converters, and load switching in server power rails. Its gate source voltage rating of 20 volts provides a wide gate drive headroom, enhancing driving flexibility.

The device’s typical forward voltage of 1 volt helps reduce voltage drops during conduction, optimizing low-voltage high-current designs. Although not qualified for automotive applications, it remains a robust choice for industrial and commercial semiconductor uses.

Supports continuous drain current of 381A for high-power switching. Drain source voltage rating of 40V suitable for medium voltage systems. Low on-resistance improves energy efficiency and reduces losses. Compact SuperSO8 package enables space-saving PCB layouts.

Wide operational temperature range ensures reliability under thermal stress. Optimized gate charge for fast switching performance. Power dissipation up to 81W manages high thermal loads effectively. RoHS compliance ensures environmental safety and regulatory conformance.

Surface mount design facilitates automated production processes.

This Infineon MOSFET is recommended for demanding industrial, laboratory, and electronic semiconductor applications involving power conversion, motor control, and switching. It is ideal for use in systems where efficiency, durability, and compact packaging are required. Explore more Infineon semiconductor products and related MOSFETs on EnvMart to meet your high-performance electronic component needs.

Infineon BSC0 N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain Source Voltage 8-Pin SuperSO8 BSC022N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 amperes.

This MOSFET has a maximum drain source voltage rating of 40 volts.

The typical on-resistance is 0.7 milliohms, which helps minimize conduction losses.

It has a power dissipation capability of up to 81 watts.

The typical gate charge is 80 nanocoulombs, allowing for fast switching speeds.

The operating temperature range is from -55°C to 175°C.

It is packaged in a SuperSO8 5 x 6 mm surface mount format.

The maximum gate source voltage rating is 20 volts.

The typical forward voltage drop is 1 volt, which helps reduce voltage losses during conduction.

Yes, this model is RoHS compliant, ensuring environmental safety and regulatory conformance.

It is suitable for power conversion, motor control, and load switching in various industrial and commercial applications.

This model has 8 pins.

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