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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC022N04LS6ATMA1 |
| Mount Type | Surface |
| Series | BSC0 |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon BSC022N04LS6ATMA1 is a high-performance N-Channel MOSFET designed for demanding power switching and conversion applications. Featuring a maximum continuous drain current of 381 amperes and a drain source voltage of 40 volts, this transistor is engineered to deliver low conduction losses and high thermal performance. Packaged in a compact 8-pin SuperSO8 5 x 6 mm surface mount format, it facilitates efficient automated PCB assembly.
Operating efficiently across a wide temperature range from -55°C up to 175°C, this MOSFET is suitable for use in thermally stressed environments. The device exhibits a very low typical on-resistance of 0.7 milliohms, which minimizes power dissipation and heat generation during high current switching. Its typical gate charge of 80 nanocoulombs supports fast switching speeds while maintaining efficiency.
The maximum power dissipation rating of 81 watts allows for substantial thermal loading, making it ideal for power supplies, motor drive stages, synchronous rectification in DC-DC converters, and load switching in server power rails. Its gate source voltage rating of 20 volts provides a wide gate drive headroom, enhancing driving flexibility.
The device’s typical forward voltage of 1 volt helps reduce voltage drops during conduction, optimizing low-voltage high-current designs. Although not qualified for automotive applications, it remains a robust choice for industrial and commercial semiconductor uses.
Supports continuous drain current of 381A for high-power switching. Drain source voltage rating of 40V suitable for medium voltage systems. Low on-resistance improves energy efficiency and reduces losses. Compact SuperSO8 package enables space-saving PCB layouts.
Wide operational temperature range ensures reliability under thermal stress. Optimized gate charge for fast switching performance. Power dissipation up to 81W manages high thermal loads effectively. RoHS compliance ensures environmental safety and regulatory conformance.
Surface mount design facilitates automated production processes.
This Infineon MOSFET is recommended for demanding industrial, laboratory, and electronic semiconductor applications involving power conversion, motor control, and switching. It is ideal for use in systems where efficiency, durability, and compact packaging are required. Explore more Infineon semiconductor products and related MOSFETs on EnvMart to meet your high-performance electronic component needs.
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