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Infineon IQE N-Channel MOSFET 253 A, 30 V, 8-Pin PQFN IQE030N06NM5CGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE030N06NM5CGATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- Designed with a low drain-source resistance of 0.85 milliohm for efficient switching performance.
- Operates within a temperature range from -55°C to 150°C.
- Supports a maximum gate-source voltage of 16 V ensuring reliable gate control.
- Typical gate charge of 80 nC at Vgs, enabling fast switching speeds.
- Maximum power dissipation rating of 81 W for high power applications.
- Compact length dimension of 3.3 mm suitable for surface mount PCB layouts.
- Complies with RoHS standards and meets automotive-grade AEC-Q101 qualification.
- Forward voltage drop of 730 mV minimizes conduction losses.
Product Description
The Infineon IQE030N06NM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding power applications with a maximum continuous drain current of 253 A and a drain-source voltage rating of 30 V. Housed in an 8-pin PQFN surface mount package with a compact form factor measuring 3.3 mm in length, it offers elevated power density and superior thermal performance.
This MOSFET features an exceptionally low drain-source on-resistance (Rds) of 0.85 milliohms, allowing for reduced conduction losses and improved overall efficiency in power switching circuits. It supports a maximum gate-source voltage of 16 V and typical gate charge of 80 nC, enabling rapid switching performance that benefits high-frequency applications.
Capable of dissipating up to 81 W of power, the device operates reliably under harsh conditions with an operating temperature range from -55°C to 150°C. This makes it well suited for automotive and industrial applications that demand robust components.
The IQE series meets critical industry standards, including RoHS compliance and automotive AEC-Q101 qualification, guaranteeing quality and environmental safety for automotive systems. Its low forward voltage drop of 730 mV also helps in minimizing losses and enhancing system efficiency.
This PQFN-packaged MOSFET provides benefits such as improved PCB thermal management and layout flexibility that are essential for compact power modules in industrial, automotive, and consumer electronics sectors.
Overall, the Infineon IQE030N06NM5CGATMA1 is ideal for power management, motor drives, DC-DC converters, and other power switching applications requiring high efficiency, reliability, and compact form factor.
Designed with a low drain-source resistance of 0.85 milliohm for efficient switching performance. Operates within a temperature range from -55°C to 150°C. Supports a maximum gate-source voltage of 16 V ensuring reliable gate control.
Typical gate charge of 80 nC at Vgs, enabling fast switching speeds. Maximum power dissipation rating of 81 W for high power applications. Compact length dimension of 3.3 mm suitable for surface mount PCB layouts. Complies with RoHS standards and meets automotive-grade AEC-Q101 qualification.
Forward voltage drop of 730 mV minimizes conduction losses. Explore the complete Infineon range and related power semiconductor devices on EnvMart to find ideal solutions for advanced industrial and automotive power electronics.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IQE030N06NM5CGATMA1 is 253 A.
This model has a maximum drain-source voltage rating of 30 V.
It operates within a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 80 nC.
The maximum power dissipation rating is 81 W.
This MOSFET is housed in an 8-pin PQFN package.
It features a low drain-source on-resistance of 0.85 milliohm.
It meets the automotive-grade AEC-Q101 qualification.
The maximum gate-source voltage supported is 16 V.
The forward voltage drop is 730 mV.
The length dimension of this model is 3.3 mm, suitable for surface mount PCB layouts.
Yes, it complies with RoHS standards.
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