Nexperia N-Channel Enhancement Mode MOSFET 15 A 30 V 8-Pin MLPAK33 PXN4R7-30QLJ

Nexperia PXN4R7-30QLJ is a high-performance N-channel enhancement mode MOSFET housed in a compact MLPAK33 (SOT8002) surface-mount plastic package with an 8-pin footprint of 3.3 x 3.3 mm. Designed using trench MOSFET technology, it provides low on-resistance and efficient switching characteristics suitable for power electronics applications.

This MOSFET supports a maximum continuous drain current of 15 A and a maximum drain-source voltage of 30 V, making it suitable for various power management and switching tasks in industrial, commercial, and electronic equipment environments.

The device can safely operate in extreme temperatures ranging from -55°C to +150°C, enabling its use in demanding and harsh conditions. The maximum gate-source voltage of ±20 V ensures robust gate drive capability without damage risks.

Its low maximum drain-source resistance of 13.6 milliohms helps reduce power loss and improve energy efficiency. The MLPAK33 package enables a small PCB footprint, ideal for applications where space conservation is critical.

Applications include DC-DC converters, motor control, power regulators, and other electronic circuit designs needing reliable N-channel MOSFETs with moderate power and current ratings.

Trench MOSFET technology for low conduction and switching losses. Compact MLPAK33 surface mount package with 8 pins. 15 A max drain current and 30 V max drain-source voltage. 12.5 W maximum power dissipation rating. Operating temperature range from -55°C to 150°C.

Maximum gate-source voltage of 20 V. Low Rds(on) of 13.6 mΩ for efficient operation. Logic-level compatible for easy control. Suitable for industrial power and electronic applications. New condition product, no specialized standards or approvals.

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