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Nexperia N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E Surface Mount, 12.5 W Power Dissipation PSMN4R8-100YSEX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PSMN4R8-100YSEX |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | LFPAK56E |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports a maximum power dissipation of 12.5 W for reliable operation.
- Low on-resistance of 13.6 mΩ reduces conduction losses enabling efficient switching.
- Operates over a wide temperature range from -55°C to 150°C.
- Maximum gate-source voltage rating of 20 V protects against gate overstress.
- Designed with a fully optimized safe operating area (SOA) for linear mode use.
- Compact LFPAK56E package suitable for surface mounting on PCBs.
- Not subject to automotive-specific standards or approvals.
- Ideal for industrial, electronic, and power management applications.
Product Description
Nexperia PSMN4R8-100YSEX is an N-Channel MOSFET designed for industrial and electronic applications requiring high efficiency and reliability. This device supports a continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, housed in a compact 4-pin LFPAK56E surface mount package.
Its low drain-source resistance of 13.6 mΩ minimizes power losses, making it efficient for switching and amplification tasks. The MOSFET can dissipate up to 12.5 W of power safely, enabling it to operate effectively in demanding environments.
Designed to operate across an extensive temperature range from -55°C to +150°C, it ensures stability and durability under various thermal conditions. The maximum gate-source voltage is rated at 20 V to safeguard the gate during operation.
This component is fully optimized with a safe operating area (SOA) that supports superior linear mode performance, making it suitable for power management in electronic circuits. It is not compliant with automotive standards but is ideal for industrial, laboratory, and manufacturing use cases where efficient transistor switching is essential.
Maximum continuous drain current of 10.3 A for high load tolerance. 30 V maximum drain-source voltage for medium voltage applications. Low on-resistance (RDS(on)) of 13.6 mΩ for reduced conduction losses. Power dissipation capacity of 12.5 W ensuring reliable performance.
Wide operating temperature range from -55°C to 150°C for robustness. 4-Pin LFPAK56E surface mount package for compact PCB designs. Maximum gate-source voltage rating of 20 V to prevent damage.
Suitable for applications in power electronics, industrial automation, and general electronic component design, the Nexperia PSMN4R8-100YSEX MOSFET provides a balance of efficiency and durability. Its surface mount design facilitates integration into compact, modern electronic assemblies.
This product is categorized under Electronics & Electricals > Discrete Semiconductors > MOSFET, making it a versatile choice for engineers and technicians specializing in semiconductor components.
Explore more Nexperia MOSFETs and electronic components in the EnvMart catalog for reliable and high-quality industrial solutions.
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Frequently Asked Questions
The maximum continuous drain current for the PSMN4R8-100YSEX is 10.3 A.
This model has a maximum drain-source voltage rating of 30 V.
It supports a maximum power dissipation of 12.5 W.
The low on-resistance (RDS(on)) of this unit is 13.6 mΩ, which helps reduce conduction losses.
The MOSFET operates over a wide temperature range from -55°C to 150°C.
It is housed in a compact 4-pin LFPAK56E surface mount package.
The maximum gate-source voltage rating is 20 V, which protects against gate overstress.
No, it is not subject to automotive-specific standards or approvals.
This model is ideal for industrial, electronic, and power management applications.
This unit has a pin count of 4.
It is an N-channel MOSFET, suitable for efficient switching and amplification tasks.
The PSMN4R8-100YSEX is manufactured in India.
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