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Infineon N-Channel Power MOSFET 15A 100V 3-Pin TO-220 IPP082N10NF2SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP082N10NF2SAKMA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP082N10NF2S |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.2mΩ |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- 3-pin TO-220 package suitable for through-hole mounting.
- Maximum continuous drain current of 15 Amperes ensures reliable operation under heavy loads.
- Low drain-source resistance of 8.2 milliohms reduces power loss.
- Maximum gate-source voltage of 20 Volts allows robust switching control.
- Power dissipation is rated up to 100 Watts for efficient heat handling.
- Operating temperature range from -55°C to 175°C for wide environmental tolerance.
- Typical gate charge of 28 nC at gate-source voltage enables fast switching.
- Compact device with dimensions approximately 10.36 mm (length) x 4.57 mm (width) x 9.45 mm (height).
Product Description
Infineon IPP082N10NF2SAKMA1 is an N-Channel power MOSFET optimized for demanding electronic and power management applications. It supports a maximum drain current of 15 Amperes and a maximum drain-source voltage of 100 Volts, making it suitable for a wide range of industrial and commercial electronic circuits that require efficient switching and power handling.
Encased in a 3-pin TO-220 package designed for through-hole mounting, the device features a low on-resistance of 8.2 milliohms, which helps reduce conduction losses and improve overall circuit efficiency. Its maximum power dissipation of 100 Watts allows for effective heat management in power conversion or switching applications.
This MOSFET operates reliably in environments ranging from -55°C to 175°C, covering a broad range of industrial operating conditions. The typical gate charge of 28 nanoCoulombs at the rated gate voltage enables rapid switching, beneficial for high-frequency applications. A forward voltage drop of 1.2 Volts further contributes to its energy-efficient operation.
The device is fully avalanche tested to ensure robustness, although it does not carry any specific automotive or additional certification standards. Its standard pin configuration permits easy integration and replacement in existing designs.
Common industrial, commercial, and automotive electronic systems benefit from such power MOSFETs for tasks including motor control, power supplies, and DC-DC converters. Its TO-220 package and electrical characteristics make it a versatile component for engineers designing power electronics.
3-pin TO-220 package for ease of mounting. Maximum drain current of 15 Amperes for high power applications. Low on-resistance to minimize conduction losses. Wide temperature operating range ensures reliability in harsh environments.
Fast switching enabled by low gate charge. Standard part number for easy sourcing and replacement. Suitable for industrial, automotive, and commercial power electronics. Explore more electronic components and power semiconductor devices in EnvMart's comprehensive catalog for advanced engineering solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 Amperes, making it suitable for high power applications.
It can handle a maximum drain-source voltage of 100 Volts, which is ideal for various electronic circuits.
This MOSFET has dimensions of approximately 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
The device comes in a 3-pin TO-220 package, which is designed for through-hole mounting.
The maximum power dissipation for this MOSFET is rated at 100 Watts, allowing for efficient heat handling.
It operates reliably within a temperature range of -55°C to 175°C, accommodating a wide variety of environmental conditions.
The typical gate charge at the gate-source voltage is 28 nanoCoulombs, enabling fast switching capabilities.
The maximum gate-source voltage is 20 Volts, which allows for robust switching control.
The device features a low drain-source resistance of 8.2 milliohms, which helps to minimize conduction losses.
This model is suitable for various applications including motor control, power supplies, and DC-DC converters in industrial and commercial systems.
Yes, the device is fully avalanche tested to ensure robustness in its operation.
The forward voltage drop for this model is 1.2 Volts, contributing to its energy-efficient operation.
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