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Vishay TrenchFET Type P-Channel MOSFET, 2.7 A Continuous Drain Current, 30 V Drain-Source Voltage, 3-Pin SI2303CDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2303CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.33Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features an enhancement channel mode for efficient switching.
- The maximum drain-source resistance is 0.33 ohms ensuring low power loss.
- Its maximum power dissipation rating is 1 watt for reliable operation.
- Designed for surface mount technology with a compact 3-pin SOT-23 package.
- Operates reliably across a wide temperature range from -55°C to 150°C.
- Maximum gate-source voltage is rated at -20 V to +20 V for versatile drive conditions.
- Typical gate charge is 4 nC measured at Vgs.
- Complies with IEC 61249-2-21 standards ensuring industrial quality.
Product Description
Vishay SI2303CDS-T1-GE3 is a TrenchFET Type P-Channel MOSFET designed for efficient power management in electronic circuits. It supports a maximum continuous drain current of 2.7 amperes and a maximum drain-source voltage of 30 volts. The device is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for space-constrained applications.
The MOSFET operates with an enhancement mode channel and offers a low maximum drain-source resistance of 0.33 ohms, which reduces conduction losses and improves efficiency. It has a maximum power dissipation of 1 watt, facilitating stable performance under moderate loads.
This component features a typical gate charge of 4 nC at the gate-source voltage, ensuring fast switching capabilities. The gate-source voltage rating ranges from -20 volts to +20 volts, providing flexible drive voltage options. It is designed to function reliably in extreme temperatures, from -55°C up to 150°C, making it suitable for demanding industrial and automotive environments.
The dimensions of this MOSFET are 3.04 mm length, 1.4 mm width, and 1.02 mm height, fitting well for compact PCB layouts. Compliance with IEC 61249-2-21 standards confirms its quality and safety attributes.
This P-Channel MOSFET is ideal for use in industrial automation, power management in electronic devices, automotive electronics, and other applications requiring reliable switching performance and compact form factor.
Choose Vishay’s SI2303CDS-T1-GE3 MOSFET for premium quality electronic component solutions at EnvMart, ensuring robust performance in your semiconductor and power electronics designs.
This MOSFET features an enhancement channel mode for efficient switching. The maximum drain-source resistance is 0.33 ohms ensuring low power loss. Its maximum power dissipation rating is 1 watt for reliable operation. Designed for surface mount technology with a compact 3-pin SOT-23 package.
Operates reliably across a wide temperature range from -55°C to 150°C. Maximum gate-source voltage is rated at -20 V to +20 V for versatile drive conditions. Typical gate charge is 4 nC measured at Vgs. Complies with IEC 61249-2-21 standards ensuring industrial quality.
Explore more Vishay electronic components and discrete semiconductors at EnvMart, where quality and reliability meet industrial expectations.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7 amperes.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
The typical gate charge is 4 nC measured at the gate-source voltage.
The dimensions of this MOSFET are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation rating for this unit is 1 watt.
The maximum gate-source voltage is rated at -20 V to +20 V.
The maximum drain-source resistance is 0.33 ohms, which helps reduce conduction losses.
It operates reliably across a wide temperature range from -55°C to 150°C.
This model is housed in a compact 3-pin SOT-23 surface mount package.
This MOSFET features a P-channel type channel.
It complies with IEC 61249-2-21 standards, ensuring industrial quality.
The channel mode of this unit is enhancement, designed for efficient switching.
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