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Vishay N-Channel MOSFET, 14 A, 30 V, Enhancement Mode, 8-Pin SOIC Package Si4134DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | Si4134DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4134DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.014Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 7.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| N-Channel MOSFET Transistor, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4410BDY-T1-E3Brand | Vishay |
Key Features
- This MOSFET operates in enhancement mode providing efficient switching performance.
- It has a low maximum drain-source resistance of 0.014 ohms ensuring minimal conduction losses.
- The device supports a maximum power dissipation of 5 W suitable for compact designs.
- Typical gate charge is 7.3 nC at specified gate-source voltage ensuring fast switching.
- Operating temperature range from -55°C up to 150°C supports various industrial environments.
- Package dimensions are 5 mm length, 4 mm width, and 1.5 mm height, conforming to SOIC standards.
- Gate-source voltage range of -20 V to +20 V ensures robust gate drive capability.
- Forward voltage drop is 1.2 V typical, optimized for power efficiency.
Product Description
Vishay's Si4134DY-T1-GE3 is a high-performance N-Channel MOSFET semiconductor device designed for power switching applications in the discrete semiconductors category. It features an 8-pin SOIC surface-mount package with compact dimensions, making it ideal for space-constrained industrial and electronic applications.
The MOSFET provides a maximum continuous drain current of 14 A and a drain-source voltage of 30 V, operating in enhancement mode for efficient switching. With a low on-resistance of 0.014 ohms, it ensures reduced heat generation and improved power efficiency in circuits.
Its maximum power dissipation rating is 5 W, combined with a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, electronic, and power management applications.
The gate charge of 7.3 nC and gate-source voltage rating of -20 V to +20 V allow fast and reliable switching control. Forward voltage of 1.2 V supports efficient power delivery.
Typical applications include power conversion, motor drives, industrial automation, and electronic control circuits. The device adheres to IEC 61249-2-21 standards and is manufactured in China.
This MOSFET offers high reliability in harsh operating conditions. The compact SOIC package facilitates automated assembly and reduced board space. It is suited for power management in electronic equipment requiring precise control.
Low gate charge improves switching losses and enhances efficiency. Wide temperature tolerance supports use in automotive grade and industrial electronics. Surface mount design eases integration into modern PCBs and systems.
Explore the Vishay MOSFET range on EnvMart for comprehensive semiconductor solutions tailored to discrete and power MOSFET needs.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The typical gate charge at the specified gate-source voltage is 7.3 nC.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation for this model is 5 W.
The package dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical forward voltage drop is 1.2 V.
The gate-source voltage range is from -20 V to +20 V.
This model uses a surface mount type.
It adheres to IEC 61249-2-21 standards.
The maximum drain-source resistance is 0.014 ohms.
Typical applications include power conversion, motor drives, industrial automation, and electronic control circuits.
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