DiodesZetex N-Channel MOSFET 49.8A 40V Enhancement Mode PowerDI3333 8-Pin Surface Mount DMTH4014LFVWQ-7

DiodesZetex DMTH4014LFVWQ-7 is a high-performance N-channel enhancement mode MOSFET designed for demanding power applications. Featuring a continuous drain current capability of 49.8 amperes and a maximum drain-source voltage of 40 volts, it is housed in an 8-pin PowerDI3333 surface mount package ensuring compact and efficient assembly.

This MOSFET is engineered for automotive and industrial applications requiring high reliability and performance over a broad temperature range from -55°C to 175°C. Although it does not carry formal automotive approvals, it meets stringent internal standards and is qualified to AEC-Q101 specifications with PPAP support.

Its low maximum drain-source resistance (RDS(ON)) of 13mΩ minimizes conduction losses resulting in improved energy efficiency and lower thermal dissipation. The excellent product figure of merit combining gate charge and RDS(ON) offers optimized switching performance suitable for power management circuits.

Manufacturing features such as a wettable flank allow improved optical inspection ensuring high yield and quality in PCB assembly processes. The surface mount footprint with 8 pins makes it suitable for compact electronic designs.

This MOSFET is ideal for use in automotive electronics, industrial motor drives, power regulators, and other environments requiring reliable high-current switching. It supports a wide range of power and signal conditioning applications requiring durable semiconductors with excellent electrical characteristics.

This MOSFET operates in enhancement mode ensuring efficient switching performance. It features a low maximum drain-source resistance of 13mΩ minimizing conduction losses. Designed for surface mount applications with an 8-pin package configuration.

Operates over a wide temperature range from -55°C up to 175°C for robustness. Fully qualified to meet automotive standards despite no formal approvals listed. Offers excellent gate charge and output resistance figure of merit for optimized power efficiency.

Has a low RDS(ON) to reduce on-state power losses in circuits. Includes wettable flank for improved optical inspection during manufacturing. Suitable for use in automotive, industrial, and power management applications. Explore more Power MOSFETs and discrete semiconductor devices in the Electronics & Electricals category at EnvMart.