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onsemi N-Channel MOSFET 127 A, 60 V, Enhancement Mode, 7-Pin TO-263 Surface Mount NTBGS3D

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onsemi N-Channel MOSFET 127 A, 60 V, Enhancement Mode, 7-Pin TO-263 Surface Mount NTBGS3D

Name: onsemi N-Channel MOSFET 127 A, 60 V, Enhancement Mode, 7-Pin TO-263 Surface Mount NTBGS3D
Brand: onsemi
SKU: 291509
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	15.7mm
Length	10.2mm
Model	NTBGS3D
Width	4.7mm
Mount Type	Surface
Series	NTBGS3D
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	7
Channel Type	N
Maximum Continuous Drain Current Id	127A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	115W
Typical Gate Charge Qg @ Vgs	39nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

High maximum continuous drain current of 127 amperes.
Operating voltage up to 60 volts with low drain-source resistance to minimize conduction losses.
Uses enhancement mode channel for efficient switching.
Forward voltage of 1.2 volts ensures efficient conduction.
Maximum power dissipation rating of 115 watts for robust thermal handling.
Compact TO-263 surface mount package with 7 pins facilitates easy PCB integration.
Wide operating temperature range from -55°C to 175°C for reliability in varied environments.
Low typical gate charge of 39 nanoCoulombs reduces switching losses.

Product Description

onsemi NTBGS3D N-Channel MOSFET (Model: NTBGS3D) offers a high continuous drain current of 127 amperes and a maximum drain-source voltage of 60 volts. This enhancement mode transistor is housed in a 7-pin TO-263 surface mount package measuring 10.2 mm in length, 4.7 mm in width, and 15.7 mm in height, making it suitable for compact electronic assemblies.

The device features low drain-source resistance (3.7 milliohms) to reduce conduction losses and a forward voltage drop of 1.2 volts that supports efficient power management. It provides a maximum power dissipation of 115 watts, enabling reliable operation under substantial load conditions.

With an operating temperature range from -55°C to 175°C, this MOSFET is designed for durability in harsh environments. The typical gate charge of 39 nC ensures faster switching with reduced driver losses, resulting in lower electromagnetic interference and noise during operation.

Compliant with RoHS standards, the onsemi NTBGS3D is an environmentally friendly component. It is ideal for industrial electronics, power management applications, and advanced semiconductor circuits requiring robust and efficient switching capabilities.

High continuous drain current rated at 127 amperes for demanding applications. Surface mount TO-263 package with 7 pins facilitating compact installation. Low Rds(on) of 3.7 milliohms reduces power dissipation and conduction losses.

Wide operating temperature range ensures reliability in industrial and commercial uses. RoHS compliant for environmentally safe manufacturing processes. Typical gate charge of 39 nC minimizes switching losses and EMI. Forward voltage of 1.2 V supporting efficient power conduction.

Power dissipation capacity of 115 W for thermal stability.

Use the onsemi NTBGS3D N-Channel MOSFET in applications such as power supplies, motor controllers, and electronic switching in industrial, laboratory, and manufacturing environments. Explore the extensive range of semiconductors available on EnvMart for enhanced circuit design and power management solutions.