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Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A Continuous Current, 600 V Drain-Source Voltage, TO-252 IPD60R280P7SAUMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD60R280P7SAUMA1
Width 6.22mm
Mount Type Surface
Series 600V CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 12A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 280mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 53W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • This MOSFET supports a maximum continuous drain current of 12 A.
  • It has a maximum drain-source voltage rating of 600 V suitable for high-voltage switching.
  • The device features a low maximum Rds(on) resistance of 280 milliohms to reduce power loss.
  • Maximum power dissipation is 53 W, supporting thermal management in high-power environments.
  • Operating temperature ranges from -40 °C up to 150 °C for harsh conditions.
  • The TO-252 surface-mount package offers a compact footprint with efficient PCB thermal dissipation.
  • A typical gate charge of 18 nC at Vgs enables fast and efficient switching.
  • Maximum gate-source voltage is limited to 20 V to prevent overstress.

Product Description

Infineon IPD60R280P7SAUMA1 600V CoolMOS P7 N-Channel MOSFET is a high-voltage enhancement-mode transistor engineered for surface-mount power electronics that require robust voltage handling and elevated thermal capabilities. With a maximum drain-source voltage of 600 V and continuous drain current rating of 12 A, it suits high power switching and conversion systems.

The device has a low on-resistance of 280 mΩ minimizing conduction losses, supporting efficient operation in demanding conditions. Its 53 W maximum power dissipation rating supports thermal margin in continuous operation, allowing deployment in industrial and commercial power modules.

This MOSFET operates with a typical gate charge of 18 nC at the gate-source voltage, ensuring rapid switching while requiring appropriate gate drivers. The gate-source voltage must not exceed 20 V to avoid damage. Its enhancement mode operation necessitates positive gate drive relative to source for switching on state.

The compact TO-252 package offers a small footprint with excellent thermal pathway through the mounting tab, facilitating PCB heat sinking. Operating temperature range from -40 °C to 150 °C makes it suitable for environments with wide temperature fluctuations.

12 A maximum continuous drain current for significant load demands. 600 V drain-source voltage rating for high-voltage power modules. Low Rds(on) of 280 mΩ reduces conduction losses for efficiency. 53 W power dissipation supports robust thermal management.

Wide operating temperature range from -40 °C to 150 °C. Compact TO-252 surface-mount package. Typical gate charge of 18 nC for fast switching. Maximum gate-source voltage limited to 20 V for safety. Forward voltage of 900 mV typical under load.

This MOSFET is commonly used in switch-mode power supply primary switches, high-voltage power supplies, motor drives requiring 600 V rated devices, industrial power switching modules, and compact surface-mount power assemblies. Its reliable switching performance across a wide temperature range makes it suitable for industrial, manufacturing, and electrical power conversion applications.

Explore the Infineon MOSFET range and other semiconductor devices in the Electronics & Electricals category at EnvMart for high quality, performance-critical electronic components.

Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A Continuous Current, 600 V Drain-Source Voltage, TO-252 IPD60R280P7SAUMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 12 A.

It has a maximum drain-source voltage rating of 600 V, suitable for high-voltage applications.

The maximum Rds(on) resistance is 280 milliohms, which helps reduce power loss during operation.

The maximum power dissipation rating is 53 W, supporting thermal management in high-power environments.

It operates within a temperature range of -40 °C to 150 °C, making it suitable for harsh conditions.

This model is packaged in a TO-252 surface-mount package, which offers a compact footprint for efficient PCB thermal dissipation.

The typical gate charge is 18 nC at the gate-source voltage, enabling fast and efficient switching.

The maximum gate-source voltage is limited to 20 V to prevent overstress and potential damage.

This model has a pin count of 3.

It is commonly used in switch-mode power supply primary switches, high-voltage power supplies, and motor drives requiring 600 V rated devices.

The typical forward voltage is 900 mV under load conditions.

This model features an N-channel type, which is typical for enhancement-mode operation.

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