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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD60R280P7SAUMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 53W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPD60R280P7SAUMA1 600V CoolMOS P7 N-Channel MOSFET is a high-voltage enhancement-mode transistor engineered for surface-mount power electronics that require robust voltage handling and elevated thermal capabilities. With a maximum drain-source voltage of 600 V and continuous drain current rating of 12 A, it suits high power switching and conversion systems.
The device has a low on-resistance of 280 mΩ minimizing conduction losses, supporting efficient operation in demanding conditions. Its 53 W maximum power dissipation rating supports thermal margin in continuous operation, allowing deployment in industrial and commercial power modules.
This MOSFET operates with a typical gate charge of 18 nC at the gate-source voltage, ensuring rapid switching while requiring appropriate gate drivers. The gate-source voltage must not exceed 20 V to avoid damage. Its enhancement mode operation necessitates positive gate drive relative to source for switching on state.
The compact TO-252 package offers a small footprint with excellent thermal pathway through the mounting tab, facilitating PCB heat sinking. Operating temperature range from -40 °C to 150 °C makes it suitable for environments with wide temperature fluctuations.
12 A maximum continuous drain current for significant load demands. 600 V drain-source voltage rating for high-voltage power modules. Low Rds(on) of 280 mΩ reduces conduction losses for efficiency. 53 W power dissipation supports robust thermal management.
Wide operating temperature range from -40 °C to 150 °C. Compact TO-252 surface-mount package. Typical gate charge of 18 nC for fast switching. Maximum gate-source voltage limited to 20 V for safety. Forward voltage of 900 mV typical under load.
This MOSFET is commonly used in switch-mode power supply primary switches, high-voltage power supplies, motor drives requiring 600 V rated devices, industrial power switching modules, and compact surface-mount power assemblies. Its reliable switching performance across a wide temperature range makes it suitable for industrial, manufacturing, and electrical power conversion applications.
Explore the Infineon MOSFET range and other semiconductor devices in the Electronics & Electricals category at EnvMart for high quality, performance-critical electronic components.
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