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Infineon CoolMOS CFD7 N-Channel MOSFET, 31 A, 650 V Enhancement Mode, TO-247 3-Pin IPA60R280CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R280CFD7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS CFD7 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
Key Features
- Features an enhancement mode channel type for efficient switching performance.
- Equipped with a TO-247 package for surface mount applications.
- Offers a maximum continuous drain current of 31 amperes for demanding loads.
- Has a maximum drain-source voltage rating of 650 volts suitable for high voltage circuits.
- Includes an ultra-fast integrated body diode to reduce switching losses.
- Delivers reduced gate charge and improved reverse recovery behavior for energy savings.
- Comes with a low maximum drain-source resistance of 280 milliohms to minimize conduction losses.
- Has three pins compatible with standard MOSFET mounting and drive configurations.
Product Description
Infineon IPA60R280CFD7XKSA1 CoolMOS CFD7 N-Channel MOSFET is designed for advanced power electronics applications requiring high voltage and current capabilities. This enhancement mode MOSFET operates with a maximum continuous drain current of 31 A and can withstand voltages up to 650 V, making it ideal for efficient power switching and conversion.
The device utilizes Infineon's latest CoolMOS CFD7 technology, featuring an integrated ultra-fast body diode that drastically reduces switching losses by minimizing gate charge and reverse recovery charge. This results in optimized energy efficiency and enhanced thermal performance.
Encased in a TO-247 package, the MOSFET supports surface mounting and reliable heat dissipation, suitable for industrial sectors such as power supplies, motor drives, and renewable energy systems. The device exhibits a low maximum drain-source resistance (280 mΩ), contributing to reduced conduction losses and improved overall system efficiency.
Additional features include rugged reverse diode dv/dt and di/dt capabilities enhancing robustness in demanding operating environments. This component forms part of the well-regarded CoolMOS 7 series, recognized for performance and reliability in power semiconductor applications.
Enhancement mode N-channel MOSFET optimized for high voltage applications. Maximum continuous drain current: 31 A. Maximum drain-source voltage: 650 V. Low Rds(on) of 280 milliohms to reduce power dissipation. TO-247 3-pin package supports efficient mounting and cooling.
Integrated fast body diode for superior reverse recovery performance. Ideal for power supplies, motor controls, and industrial equipment. Designed without automotive certifications, emphasizing general industrial use. Part of Infineon's CoolMOS CFD7 high voltage superjunction MOSFET series.
Explore more Infineon power semiconductors and related MOSFET products on EnvMart for comprehensive industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31 amperes.
It has a maximum drain-source voltage rating of 650 volts, suitable for high voltage applications.
This unit is encased in a TO-247 package, which supports surface mounting.
It features a low maximum drain-source resistance of 280 milliohms, which helps minimize conduction losses.
This model is an enhancement mode N-channel MOSFET, optimized for efficient switching performance.
It is suitable for applications in power supplies, motor drives, and renewable energy systems.
Yes, it includes an ultra-fast integrated body diode that reduces switching losses and improves reverse recovery behavior.
This model has a pin count of three, compatible with standard MOSFET mounting configurations.
This device is part of the CoolMOS CFD7 series, known for high voltage and current capabilities in power electronics applications.
The country of origin for this MOSFET is India.
The TO-247 package design supports reliable heat dissipation, enhancing thermal performance during operation.
It supports surface mounting, making it suitable for various industrial applications.
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