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Vishay High Power Infrared Emitting Diode Surface Mount 860nm Radiant Flux 2100mW VSMA1085400

Category Diodes Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Model VSMA1085400
Packaging Tape & Reel
Mount Type Surface
Series VSMA1085400
Package Type Surface Mount
Standards/Approvals ANSI, ESDA, J-STD-020E, JEDEC JS-001
Maximum Supply Voltage 5V
Peak Wavelength 860nm
Radiant Flux 2100mW
Angle of half intensity 40°
Radiant Intensity 1350mW/sr

Key Features

  • Features a double stack emitter chip for highest radiant power.
  • 42 mil chip size enables 1.5A DC operation and 5.0A pulsed currents.
  • Compact package dimensions of 3.4 x 3.4 x 2.45 mm.
  • Low thermal resistance ensures efficient heat dissipation.
  • Angle of half intensity is ±40 degrees for focused emission.
  • Compliant with ANSI, ESDA, J-STD-020E, JEDEC JS-001 standards.
  • ESD protection up to 5 kV according to industry standards.
  • Lead-free reflow soldering compatible for modern PCB assembly.

Product Description

Vishay VSMA1085400 is a high power infrared emitting diode optimized for surface mount technology with a peak wavelength of 860 nm and radiant flux of 2100 mW.

This component uses a double stack emitter chip design that achieves highest radiant power with a chip size of 42 mil, allowing continuous current of 1.5 Amps and pulsed currents up to 5 Amps, making it ideal for high power infrared applications.

The diode is enclosed in a compact surface mount lens package measuring 3.4 x 3.4 x 2.45 mm, facilitating integration into densely packed electronic circuits. It features low thermal resistance of 6 K/W and a angle of half intensity ±40°, which ensures efficient heat management and controlled emission pattern respectively.

Designed to meet stringent standards including ANSI, ESDA, J-STD-020E, and JEDEC JS-001, the diode also offers robust ESD protection up to 5 kV, enhancing device reliability.

The device is compatible with lead-free reflow soldering processes, supporting environmentally friendly manufacturing requirements and is supplied in tape and reel packaging to support automated assembly.

This infrared diode finds applications in industrial electronics, optoelectronics systems, and other high power infrared emission uses such as remote sensing and communication devices.

Choose Vishay VSMA1085400 for superior radiant power, reliable operation, and modern surface mount packaging in your infrared LED applications. Features a double stack emitter chip for highest radiant power. 42 mil chip size enables 1.5A DC operation and 5.0A pulsed currents.

Compact package dimensions of 3.4 x 3.4 x 2.45 mm. Low thermal resistance ensures efficient heat dissipation. Angle of half intensity is ±40 degrees for focused emission. Compliant with ANSI, ESDA, J-STD-020E, JEDEC JS-001 standards.

ESD protection up to 5 kV according to industry standards. Lead-free reflow soldering compatible for modern PCB assembly. Packaged in tape and reel for automated insertion. Suitable for industrial, electronic components assembly, and optoelectronic applications.

Explore similar high power infrared emitting Diodes and LED components in the Electronics Components category at EnvMart.

Vishay High Power Infrared Emitting Diode Surface Mount 860nm Radiant Flux 2100mW VSMA1085400
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Frequently Asked Questions

The peak wavelength of this infrared emitting diode is 860 nm.

The radiant flux of the VSMA1085400 is 2100 mW.

This model has compact package dimensions of 3.4 x 3.4 x 2.45 mm.

The maximum supply voltage for the VSMA1085400 is 5V.

The angle of half intensity for the VSMA1085400 is ±40 degrees.

It is packaged in tape and reel format, which supports automated assembly.

This model complies with ANSI, ESDA, J-STD-020E, and JEDEC JS-001 standards.

The thermal resistance of the VSMA1085400 is 6 K/W, ensuring efficient heat dissipation.

This model uses a surface mount type, suitable for modern PCB assembly.

The radiant intensity of this diode is 1350 mW/sr.

It allows continuous current operation of 1.5 Amps and pulsed currents up to 5 Amps.

This infrared diode is suitable for industrial electronics, optoelectronics systems, and high power infrared applications such as remote sensing and communication devices.

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