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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | BAS19,215 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | BAS19 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Power Dissipation Pd | 250mW |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2.5A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 200mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 120V |
The Nexperia BAS19,215 diode is a silicon junction single diode supplied in a compact 3-pin SOT-23 surface mount package. Designed for switching diode applications, it supports a maximum forward current of 200 mA and a peak repetitive reverse voltage of 120 V. The diode’s low leakage and high-voltage characteristics make it suitable for dense circuit boards and high-voltage environments.
Its maximum forward voltage of 1.25 V and power dissipation up to 250 mW support efficient performance without excessive heat generation. The device maintains stable operation over a wide temperature range from -65°C to 150°C, making it suitable for industrial, electronics manufacturing, and automotive electronics applications requiring reliable switching behavior.
The diode features a peak reverse recovery time of 4 ns, enabling fast switching speeds in digital and analog circuits. Its physical dimensions are 3 mm length, 1.4 mm width, and 1 mm height, making it suitable for compact PCB layouts. Despite lacking specific automotive certifications, it is geared towards general semiconductor discrete component applications.
Typical use cases include signal switching, protection circuits, and general purpose rectification in consumer electronics, industrial controllers, instrumentation, and power supplies.
Supports high density circuit board designs with surface mount SOT-23 packaging. Exhibits low leakage current and high voltage tolerance for reliable performance. Ensures high switching speeds with 4 ns reverse recovery time.
Operates across wide temperature extremes from -65°C to 150°C. Compact physical size facilitates miniaturized electronic assemblies. Rated for 200 mA forward current and 120 V reverse voltage conditions. Withstands power dissipation up to 250 mW, aiding thermal stability.
Ideal for industrial, laboratory, construction, automotive, and manufacturing electronics. Explore a wide selection of Nexperia semiconductor devices at EnvMart, your partner for cutting-edge electronic components in India and worldwide.
Explore more products in our Diodes category.
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