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Vishay Switching Diode Single Silicon Junction 1 A 50 V SMA Package RS1A-E3/61T

Category Diodes Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.09mm
Length 4.5mm
Model RS1A-E3/61T
Width 2.79mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SMA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 150ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Single diode configuration for efficient switching performance.
  • Maximum forward current of 1 ampere suitable for moderate power applications.
  • Reverse repetitive peak voltage rated at 50 volts ensuring reliable blocking capability.
  • Fast recovery time of 150 nanoseconds for high-speed switching.
  • Compact SMA surface mount package with dimensions 4.5mm length, 2.79mm width, and 2.09mm height.
  • Operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Supports a peak non-repetitive forward surge current of 30 amperes.
  • Maximum forward voltage drop of 1.3 volts for efficient conduction.

Product Description

Vishay RS1A-E3/61T is a high-efficiency switching diode featuring a silicon junction designed for fast recovery in power electronics applications. With a maximum forward current of 1 ampere and a peak reverse voltage of 50 volts, this diode provides reliable switching performance in compact SMA surface mount packaging.

The diode's fast recovery time of 150 nanoseconds minimizes switching losses, making it suitable for use in power rectifiers, voltage clamping, and other industrial, electronic, and laboratory applications where high-speed switching is required.

Its compact dimensions (4.5 mm length, 2.79 mm width, 2.09 mm height) enable high-density board layouts. The wide operating temperature range from -55°C to 150°C ensures stable operation in demanding environments including industrial automation and power supply systems.

Single diode configuration for reliable switching. Maximum forward current of 1 A with a forward voltage of 1.3 V. Reverse repetitive peak voltage up to 50 V enhances blocking capability. Fast recovery time of 150 ns reduces power losses in switching circuits.

Compact SMA package for surface mounting on PCBs. Wide temperature tolerance from -55°C to 150°C allows varied operational contexts. Peak non-repetitive forward surge current of 30 A supports transient conditions. Lead-free and RoHS compliant for environmental standards.

This switching diode is ideal for use in industrial electronics, power supply units, electronic assembly, laboratory equipment, and manufacturing processes requiring fast recovery diodes. Available in pack sizes suitable for production efficiency.

Explore more Vishay semiconductor components and switching Diodes at EnvMart to optimize your electronic designs and industrial projects.

Vishay Switching Diode Single Silicon Junction 1 A 50 V SMA Package RS1A-E3/61T
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Frequently Asked Questions

The maximum forward current of this diode is 1 ampere, making it suitable for moderate power applications.

The RS1A-E3/61T diode has a reverse repetitive peak voltage rating of 50 volts, ensuring reliable blocking capability.

The compact SMA package of this diode has dimensions of 4.5 mm in length, 2.79 mm in width, and 2.09 mm in height.

The diode features a fast recovery time of 150 nanoseconds, which helps minimize switching losses.

This diode operates within a temperature range of -55°C to 150°C, suitable for harsh environments.

The maximum forward voltage drop for this diode is 1.3 volts, which contributes to efficient conduction.

The diode supports a peak non-repetitive forward surge current of 30 amperes, accommodating transient conditions.

The RS1A-E3/61T is designed for surface mounting on PCBs, allowing for compact layouts.

This diode has a pin count of 2, suitable for single diode configurations.

The RS1A-E3/61T is classified as a silicon junction diode, which is common in power electronics applications.

The diode is manufactured in India, as indicated by its country of origin.

This model is suitable for use in power rectifiers, voltage clamping, and various industrial and laboratory applications requiring fast recovery diodes.

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