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Infineon CoolMOS CE N-Channel MOSFET, 5A, 600V, 3-Pin TO-220FP IPA60R1K5CEXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 29.75mm |
| Length | 13.75mm |
| Model | IPA60R1K5CEXKSA1 |
| Width | 10.65mm |
| Mount Type | Through Hole |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Maximum Power Dissipation Pd | 49W |
| Typical Gate Charge Qg @ Vgs | 9.4nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- Designed for low conduction and switching losses to improve efficiency.
- Features a maximum continuous drain current of 5 amperes.
- Supports a maximum drain-source voltage of 600 volts.
- Provides rugged commutation for enhanced reliability.
- Utilizes a through-hole mount type with a 3-pin configuration.
- Maximum power dissipation rating of 49 watts.
- Operates in a wide temperature range from -40°C to 150°C.
- Typical gate charge is 9.4 nC at Vgs.
Product Description
Infineon's IPA60R1K5CEXKSA1 is a CoolMOS CE series N-Channel MOSFET designed to deliver high efficiency with very low conduction and switching losses. It is ideal for industrial, power management, and electronic applications requiring robust performance at elevated voltages and currents.
This MOSFET supports a maximum continuous drain current of 5 amperes and a maximum drain-source voltage of 600 volts, making it suitable for power factor correction (PFC) stages, hard switching PWM stages, and resonant switching circuits. Typical use cases include computer power supplies, adapters, LCD and PDP televisions, and indoor lighting systems.
The component features a 3-pin TO-220FP through-hole package that facilitates easy mounting and reliable thermal management with a maximum power dissipation of 49 watts. It operates reliably across a temperature range from -40°C to 150°C, providing ruggedness against electrical and thermal stresses.
The MOSFET's typical gate charge is 9.4 nanocoulombs at gate-source voltage, contributing to efficient switching performance. Its maximum gate-source voltage rating is 30 volts, ensuring safe operation within specified electrical limits. The device employs Pb-free plating and halogen-free mold compounds to comply with environmental standards.
With compact dimensions of 29.75 mm height, 13.75 mm length, and 10.65 mm width, the TO-220FP package allows for space-efficient circuit design. This Infineon product is supplied in tubes for bulk handling and is intended for new equipment manufacturing and repair in electronics and industrial fields.
Designed for low conduction and switching losses to improve efficiency. Features a maximum continuous drain current of 5 amperes. Supports a maximum drain-source voltage of 600 volts. Provides rugged commutation for enhanced reliability.
Utilizes a through-hole mount type with a 3-pin configuration. Maximum power dissipation rating of 49 watts. Operates in a wide temperature range from -40°C to 150°C. Typical gate charge is 9.4 nC at Vgs. Maximum gate-source voltage of 30 volts.
Compact TO-220FP package dimensions: 29.75 mm height, 13.75 mm length, and 10.65 mm width. Browse the Electronics & Electricals category for more high-quality semiconductor components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 amperes.
It supports a maximum drain-source voltage of 600 volts.
The maximum power dissipation rating is 49 watts.
The dimensions of the TO-220FP package are 29.75 mm in height, 13.75 mm in length, and 10.65 mm in width.
The typical gate charge is 9.4 nanocoulombs at gate-source voltage.
It operates in a wide temperature range from -40°C to 150°C.
This model utilizes a through-hole mount type with a 3-pin configuration.
The maximum gate-source voltage rating is 30 volts.
It features an N-channel configuration.
It is suitable for applications such as power factor correction (PFC) stages, hard switching PWM stages, and resonant switching circuits.
This model belongs to the CoolMOS CE series.
The country of origin for this component is India.
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