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Infineon CoolMOS C3 N-Channel MOSFET 4 A 800 V 3-Pin TO-252 SPD04N80C3ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | SPD04N80C3ATMA1 |
| Width | 2.41mm |
| Mount Type | Surface |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC, RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.3Ω |
| Maximum Power Dissipation Pd | 63W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features low on-state resistance for efficient conduction.
- Capable of dissipating up to 63 W power.
- Operates reliably between -55°C to 175°C temperature range.
- Has a maximum gate-source voltage of 20 V and a typical gate charge of 31 nC.
- Includes JEDEC and RoHS compliance for quality assurance.
- Compact dimensions of 6.73 mm length, 6.22 mm height, and 2.41 mm width.
- Designed for surface mount applications with a 3-pin configuration.
- Ideal for power electronics and industrial semiconductor uses.
Product Description
Infineon SPD04N80C3ATMA1 CoolMOS C3 N-Channel MOSFET provides a robust solution for power switching applications with maximum continuous drain current of 4 A and maximum drain-source voltage of 800 V. Its surface-mount TO-252 package supports compact industrial electronics designs requiring efficient power management.
This MOSFET features low specific on-state resistance and low output capacitance energy storage, reducing switching losses and optimizing system efficiency. The maximum power dissipation rating of 63 W ensures powerful operation under demanding loads.
The device operates reliably in a broad temperature range from -55°C minimum to 175°C maximum, suitable for harsh industrial and automotive environments although it is not compliant with automotive standards. Its gate-source voltage rating of 20 V and typical gate charge of 31 nC support fast switching capabilities.
Dimensionally compact, with a length of 6.73 mm, height of 6.22 mm, and width of 2.41 mm, the 3-pin TO-252 configuration allows easy integration into surface-mounted circuit boards, perfect for industrial electronics, power supplies, and electronic component manufacturing.
Low specific on-state resistance enhances conduction efficiency. High maximum power dissipation favors industrial load handling. Wide operating temperature range adds versatility in harsh conditions. JEDEC and RoHS certifications affirm quality and compliance.
Compact TO-252 surface mount package supports dense PCB layouts. Typical forward voltage of 1.2 V suitable for power conversion circuits. Low gate charge improves switching performance and energy efficiency. 3-pin configuration simplifies board design and assembly.
This Infineon CoolMOS C3 series MOSFET is widely used in industrial power electronics, semiconductors manufacturing, electronics components production, and other manufacturing sectors requiring durable, high-performance power switching devices.
Explore our wide selection of MOSFETs and other semiconductor components at EnvMart for reliable industrial and electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
This MOSFET has a maximum drain-source voltage rating of 800 V.
It can dissipate up to 63 W of power.
The operating temperature range is from -55°C to 175°C.
The typical gate charge is 31 nC.
The dimensions are 6.73 mm in length, 6.22 mm in height, and 2.41 mm in width.
It is designed for surface mounting.
It includes JEDEC and RoHS compliance for quality assurance.
The maximum gate-source voltage rating is 20 V.
This model features an N-channel configuration.
It is suitable for power electronics and industrial semiconductor applications.
The typical forward voltage is 1.2 V.
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