$0.46
$0.45
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon N-Channel MOSFET 6 A 600 V Enhancement Mode 3-Pin TO-252 Package IPD60R600P7SAUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD60R600P7SAUMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- The MOSFET supports a maximum continuous drain current of 6 A.
- It operates at a maximum drain-source voltage of 600 V for reliable high-voltage applications.
- Features an enhancement mode channel and a low drain-source resistance of 600 mΩ.
- Maximum power dissipation rated at 41 W ensures efficient thermal handling.
- Typical gate charge of 9 nC facilitates fast switching and low losses.
- Operating temperature range from -40°C to 150°C supports harsh environments.
- Integrates a rugged body diode and an integrated gate resistor enhancing switching robustness.
- Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height enable PCB space savings.
Product Description
Infineon IPD60R600P7SAUMA1 is a high-performance 600 V CoolMOS™ P7 N-Channel MOSFET designed for surface mount applications in power electronics. It supports a maximum continuous drain current of 6 A and operates efficiently within temperatures ranging from -40°C to 150°C. This device belongs to the IPD series and features an enhancement mode channel with a low drain-source resistance of 600 mΩ, enabling high efficiency in switching and conduction.
Its 3-pin TO-252 package offers a compact footprint with dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height, ideal for saving PCB space in industrial, manufacturing, and power management systems. The MOSFET integrates an intrinsic gate resistor and a rugged body diode which enhance thermal stability and switching reliability, making it suitable for demanding environments.
The typical gate charge at 9 nC and a maximum gate-source voltage of 20 V ensure low switching losses and robust control. This device is optimized for applications requiring efficient power conversion and high voltage operation such as switching power supplies, motor control, and industrial power electronics.
The MOSFET supports a maximum continuous drain current of 6 A. It operates at a maximum drain-source voltage of 600 V for reliable high-voltage applications. Features an enhancement mode channel and a low drain-source resistance of 600 mΩ.
Maximum power dissipation rated at 41 W ensures efficient thermal handling. Typical gate charge of 9 nC facilitates fast switching and low losses. Operating temperature range from -40°C to 150°C supports harsh environments.
Integrates a rugged body diode and an integrated gate resistor enhancing switching robustness. Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.41 mm enable PCB space savings. Designed for surface mount applications in power management and industrial electronics.
Infineon’s IPD60R600P7SAUMA1 combines excellent figure of merit and ruggedness, ensuring durability in automotive-grade and industrial-grade applications. It is part of a wide portfolio of through-hole and surface mount devices that support various power conversion needs.
Explore a broad range of MOSFETs and discrete semiconductors for your electronic design projects at EnvMart. Benefit from detailed specifications, technical support, and reliable products for industrial, manufacturing, HVAC, and commercial power electronics applications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 6 A.
It operates at a maximum drain-source voltage of 600 V.
The typical gate charge is 9 nC, which facilitates fast switching and low losses.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The operating temperature range is from -40°C to 150°C, making it suitable for harsh environments.
The maximum power dissipation is rated at 41 W, ensuring efficient thermal handling.
It features an enhancement mode N-channel, which enables high efficiency in switching and conduction.
Yes, it integrates a rugged body diode and an intrinsic gate resistor, enhancing switching robustness and thermal stability.
The maximum gate-source voltage is 20 V.
The drain-source resistance is 600 mΩ, contributing to its efficiency.
This MOSFET has a pin count of 3.
It is optimized for applications requiring efficient power conversion and high voltage operation, such as switching power supplies and motor control.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.40
$0.39
-3%
New
$0.46
$0.45
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent