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Infineon IPP N-Channel MOSFET 77A 55V Enhancement Mode 3-Pin TO-220 IPP77N06S212AKSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPP77N06S212AKSA2 |
| Mount Type | Through Hole |
| Series | IPP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 77A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 158W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET features an enhancement mode N-channel design for efficient switching.
- It has a maximum continuous drain current rating of 77 amperes.
- The maximum drain-source voltage is 55 volts, suitable for various automotive and industrial applications.
- Package type is TO-220 with three pins, providing easy mounting through-hole style.
- Low on-resistance of 12 milliohms ensures reduced power dissipation and heat generation.
- Maximum gate-source voltage rating is 20 volts, supporting robust gate drive capabilities.
- Forward voltage drop is 1.3 volts, contributing to efficiency during conduction.
- Typical gate charge at 20V gate voltage is 45 nanocoulombs.
Product Description
Infineon IPP77N06S212AKSA2 is an N-channel enhancement mode MOSFET designed for automotive and industrial power applications. This semiconductor device comes in a durable TO-220 package with three pins and supports through-hole mounting.
Rated for a maximum continuous drain current of 77 amperes and a maximum drain-source voltage of 55 volts, the MOSFET ensures effective switching performance with an ultra-low on-resistance of only 12 milliohms. The device's rated maximum power dissipation of 158 watts makes it capable of operating reliably in demanding environments at temperatures up to 175 degrees Celsius. The maximum gate-source voltage is 20 volts, enabling strong gate control to optimize switching speed and efficiency. The typical gate charge of 45 nanocoulombs reduces switching losses during high-speed operation.
This component is qualified to the automotive standard AEC-Q101, ensuring high reliability and durability required for automotive systems. It features green packaging compliant with environmental standards (lead-free) and is 100% avalanche tested for ruggedness.
Its features include enhancement channel mode operation, automotive qualification, and a compact TO-220 package facilitating efficient heat dissipation and mechanical stability. The MOSFET is ideal for use in automotive power electronics, industrial motor drives, power conversion systems, and embedded electronics requiring reliable high current switching capabilities.
The N-channel architecture provides fast switching and low conduction losses. TO-220 through-hole package ensures easy integration and excellent thermal management. Maximum operating temperature of 175 degrees Celsius enables use in harsh industrial and automotive environments.
Infineon’s IPP series MOSFETs deliver high performance with AEC-Q101 qualification. Enhanced durability with 100% avalanche testing and MSL1 moisture sensitivity rating.
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Frequently Asked Questions
The maximum continuous drain current rating for this model is 77 amperes.
This MOSFET has a maximum drain-source voltage of 55 volts.
The on-resistance of this model is 12 milliohms, which helps reduce power dissipation.
It comes in a TO-220 package type, designed for through-hole mounting.
The maximum operating temperature is 175 degrees Celsius, suitable for harsh environments.
The typical gate charge at a 20V gate voltage is 45 nanocoulombs.
This model is qualified to the automotive standard AEC-Q101, ensuring high reliability.
The forward voltage drop for this MOSFET is 1.3 volts, contributing to its efficiency during conduction.
The minimum operating temperature is -55 degrees Celsius.
The TO-220 package of this MOSFET has three pins.
The maximum power dissipation rating is 158 watts.
This MOSFET features an N-channel design, which is suitable for efficient switching applications.
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