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STMicroelectronics STripFET N-Channel MOSFET 40 A 100 V Enhancement Mode 3-Pin TO-220 STP40NF10L

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STMicroelectronics STripFET N-Channel MOSFET 40 A 100 V Enhancement Mode 3-Pin TO-220 STP40NF10L

Name: STMicroelectronics STripFET N-Channel MOSFET 40 A 100 V Enhancement Mode 3-Pin TO-220 STP40NF10L
Brand: STMicroelectronics
SKU: 288268
Price: 1.1 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	STP40NF10L
Width	4.6mm
Mount Type	Through Hole
Series	STripFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-65°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	33mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150W
Typical Gate Charge Qg @ Vgs	46nC
Maximum Gate Source Voltage Vgs	-17, +17V
Forward Voltage Vf	1.3V

Key Features

Features STripFET technology for efficient switching performance.
Enhancement mode channel provides reliable operation.
Maximum power dissipation of 150 W allows for high power applications.
Maximum drain source resistance of 33 milliohms ensures low conduction losses.
Rated for operating temperatures from -65°C to 175°C.
Capable of handling a gate-source voltage range from -17 V to +17 V.
Compact dimensions with 10.4 mm length, 4.6 mm width, and 9.15 mm height.
Comes in a 3-pin TO-220 through-hole mount package.

Product Description

STMicroelectronics STP40NF10L is an N-channel power MOSFET utilizing advanced STripFET technology. It offers a maximum continuous drain current of 40 A and a maximum drain-source voltage of 100 V, making it suitable for high-efficiency power switching applications.

This MOSFET is constructed in a durable 3-pin TO-220 package designed for through-hole mounting, facilitating easy integration into a variety of electronic and electrical circuits.

The device operates reliably over a wide temperature range, from -65°C to 175°C, and supports an enhancement mode channel type with a gate-source voltage range of -17 V to +17 V. It features a maximum drain-source resistance of 33 milliohms and a typical gate charge of 46 nC, enabling fast switching and low conduction losses.

With a maximum power dissipation of 150 W and a forward voltage drop of 1.3 V, this MOSFET is ideal for use in power management, motor drives, DC-DC converters, and other industrial and commercial electronic applications.

The compact physical dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height allow for space-efficient designs. Its robust design ensures reliable performance even under demanding operating conditions.

This STMicroelectronics MOSFET is suited for professional electronic manufacturing, power electronics, and laboratory projects requiring high current and voltage handling capability.

Features STripFET technology for efficient switching performance. Enhancement mode channel provides reliable operation. Maximum power dissipation of 150 W allows for high power applications. Maximum drain source resistance of 33 milliohms ensures low conduction losses.

Rated for operating temperatures from -65°C to 175°C. Capable of handling a gate-source voltage range from -17 V to +17 V. Compact dimensions with 10.4 mm length, 4.6 mm width, and 9.15 mm height. Comes in a 3-pin TO-220 through-hole mount package.

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