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Infineon Dual HEXFET 1 N-Channel MOSFET, 21 A, 30 V Enhancement Mode, 8-Pin SO-8 IRF8734TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF8734TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
| Transistor Configuration | Dual |
Key Features
- This device operates in enhancement mode for efficient switching performance.
- It features a low maximum drain-source resistance of 3.5 mΩ for minimal power loss.
- Typical gate charge is 20 nC at Vgs, facilitating fast switching speeds.
- Supports a maximum gate-source voltage of 20 V ensuring durability and reliability.
- Maximum power dissipation is rated at 2.5 W suitable for compact power designs.
- Suitable operating temperature ranges from -55°C to +150°C for industrial use.
- Compliant with RoHS standards ensuring environmental safety.
- Dual transistor configuration allows integration efficiency in synchronous power and DC-DC converter circuits.
Product Description
Infineon IRF8734TRPBF is a dual HEXFET N-Channel MOSFET with a maximum continuous drain current of 21 A and maximum drain-source voltage of 30 V. It is housed in a compact 8-pin SO-8 surface-mount package, designed for efficient power switching applications.
This MOSFET operates in enhancement mode, featuring a low maximum drain-source resistance of 3.5 milliohms, ensuring low conduction losses and high efficiency in power management circuits. With a typical gate charge of 20 nC at the gate-source voltage, it supports fast switching operations critical for high-frequency synchronous rectifiers and DC-DC converter applications.
The device supports a wide operating temperature range from -55°C up to 150°C, making it suitable for demanding industrial and commercial electronics environments. Its maximum power dissipation is 2.5 W, optimizing thermal performance within compact circuit designs.
Additional features include a forward voltage drop of approximately 1 V and a maximum gate-source voltage of 20 V, enhancing the device’s ruggedness and reliability. The transistor configuration is dual, facilitating efficient integration into complex power circuits.
This MOSFET series is RoHS compliant, supporting eco-friendly manufacturing standards. It is ideal for applications such as synchronous MOSFETs in notebook processors, power management in networking hardware, and isolated DC-DC converters.
This MOSFET is designed for high-efficiency switching in power electronics. Dual HEXFET transistor configuration optimizes circuit integration. Compact SO-8 package supports surface mount technology. Wide operating temperature range suits industrial environments.
Compliance with RoHS ensures environmentally safe production. Low Rds(on) minimizes power losses during conduction. High maximum drain current supports demanding load conditions. Fast switching capability aided by low gate charge.
Applications include notebook power management and networking systems. Explore more Infineon semiconductor products and power MOSFETs in EnvMart’s extensive electronics components catalog for advanced electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A.
It can handle a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs is 20 nC.
The maximum power dissipation is rated at 2.5 W.
The dimensions of the SO-8 package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The operating temperature range is from -55°C to +150°C.
The maximum gate-source voltage supported is 20 V.
This MOSFET uses surface mount technology.
The maximum drain-source resistance is 3.5 mΩ.
Yes, this model is compliant with RoHS standards, ensuring environmental safety.
This MOSFET has 8 pins.
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