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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF300P226 |
| Mount Type | Through Hole |
| Series | StrongIRFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 556W |
| Typical Gate Charge Qg @ Vgs | 191nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon StrongIRFET IRF300P226 is a high-performance N-Channel MOSFET optimized for power switching applications, capable of continuous drain current up to 100 A and drain-source voltage up to 300 V. Packaged in a rugged 3-pin TO-247 through-hole form factor, it is engineered to deliver efficient energy handling in harsh industrial environments.
Designed with an enhancement mode channel and low on-resistance of 19 mΩ, this MOSFET minimizes conduction losses and improves thermal performance. The device supports a maximum power dissipation of 556 W, enabling reliable operation under demanding loads.
The typical gate charge of 191 nC at the rated gate voltage and a max gate-source voltage of ±20 V provide balanced switching performance. Its low forward voltage of 1.2 V reduces energy loss during conduction cycles.
Operating temperature spans from -55°C to 175°C making the IRF300P226 suitable for various industrial and commercial applications including Uninterruptible Power Supplies (UPS), inverters, brushed and brushless DC motor drives, half-bridge and full-bridge topologies, resonant mode power supplies, DC/DC and AC/DC converters, OR-ing, and redundant power switches as well as battery powered circuits.
The TO-247 package facilitates easy mounting and heat dissipation for enhanced reliability in through-hole PCB designs. Maximum continuous drain current is rated at 100 A for robust performance. Supports high voltage operation up to 300 V drain-source voltage.
High power dissipation capacity of 556 W suitable for demanding applications. Features low drain-source resistance of 19 mΩ for efficient conduction. Capable of operating in a wide temperature range from -55°C to 175°C. Gate-source voltage maximum rating is ±20 V ensuring gate protection.
Typical gate charge is 191 nC at specified gate voltage for switching efficiency. Forward voltage drop is low at 1.2 V to minimize losses. Mounts via through-hole with 3 pins in TO-247 package for ease of integration. Ideal for industrial uses including UPS, inverter systems, motor drives, and power converters.
This robust device from Infineon is engineered for reliability and efficiency in power management circuits and is a key component for electronic manufacturing, industrial automation, and power supply industries.
Discover more about Infineon power components and explore related high-performance MOSFETs and semiconductors at EnvMart.
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