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Infineon StrongIRFET N-Channel MOSFET 100 A 300 V Enhancement 3-Pin TO-247 IRF300P226

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IRF300P226
Mount Type Through Hole
Series StrongIRFET
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 300V
Maximum Drain Source Resistance Rds 19mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 556W
Typical Gate Charge Qg @ Vgs 191nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current is rated at 100 A for robust performance.
  • Supports high voltage operation up to 300 V drain-source voltage.
  • High power dissipation capacity of 556 W suitable for demanding applications.
  • Features low drain-source resistance of 19 mΩ for efficient conduction.
  • Capable of operating in a wide temperature range from -55°C to 175°C.
  • Gate-source voltage maximum rating is ±20 V ensuring gate protection.
  • Typical gate charge is 191 nC at specified gate voltage for switching efficiency.
  • Forward voltage drop is low at 1.2 V to minimize losses.

Product Description

Infineon StrongIRFET IRF300P226 is a high-performance N-Channel MOSFET optimized for power switching applications, capable of continuous drain current up to 100 A and drain-source voltage up to 300 V. Packaged in a rugged 3-pin TO-247 through-hole form factor, it is engineered to deliver efficient energy handling in harsh industrial environments.

Designed with an enhancement mode channel and low on-resistance of 19 mΩ, this MOSFET minimizes conduction losses and improves thermal performance. The device supports a maximum power dissipation of 556 W, enabling reliable operation under demanding loads.

The typical gate charge of 191 nC at the rated gate voltage and a max gate-source voltage of ±20 V provide balanced switching performance. Its low forward voltage of 1.2 V reduces energy loss during conduction cycles.

Operating temperature spans from -55°C to 175°C making the IRF300P226 suitable for various industrial and commercial applications including Uninterruptible Power Supplies (UPS), inverters, brushed and brushless DC motor drives, half-bridge and full-bridge topologies, resonant mode power supplies, DC/DC and AC/DC converters, OR-ing, and redundant power switches as well as battery powered circuits.

The TO-247 package facilitates easy mounting and heat dissipation for enhanced reliability in through-hole PCB designs. Maximum continuous drain current is rated at 100 A for robust performance. Supports high voltage operation up to 300 V drain-source voltage.

High power dissipation capacity of 556 W suitable for demanding applications. Features low drain-source resistance of 19 mΩ for efficient conduction. Capable of operating in a wide temperature range from -55°C to 175°C. Gate-source voltage maximum rating is ±20 V ensuring gate protection.

Typical gate charge is 191 nC at specified gate voltage for switching efficiency. Forward voltage drop is low at 1.2 V to minimize losses. Mounts via through-hole with 3 pins in TO-247 package for ease of integration. Ideal for industrial uses including UPS, inverter systems, motor drives, and power converters.

This robust device from Infineon is engineered for reliability and efficiency in power management circuits and is a key component for electronic manufacturing, industrial automation, and power supply industries.

Discover more about Infineon power components and explore related high-performance MOSFETs and semiconductors at EnvMart.

Infineon StrongIRFET N-Channel MOSFET 100 A 300 V Enhancement 3-Pin TO-247 IRF300P226
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Frequently Asked Questions

The maximum continuous drain current for this model is rated at 100 A, providing robust performance for various applications.

It supports a maximum drain-source voltage of 300 V, making it suitable for high voltage applications.

This MOSFET has a high power dissipation capacity of 556 W, which is suitable for demanding applications.

It features a low drain-source resistance of 19 mΩ, which enhances conduction efficiency.

The IRF300P226 can operate within a wide temperature range from -55°C to 175°C, making it versatile for various environments.

The maximum gate-source voltage rating for this device is ±20 V, ensuring adequate gate protection.

The typical gate charge is 191 nC at the specified gate voltage, contributing to its switching efficiency.

The forward voltage drop is low at 1.2 V, which helps minimize energy losses during conduction cycles.

This model is packaged in a TO-247 through-hole form factor, facilitating easy mounting and heat dissipation.

It is suitable for various applications including Uninterruptible Power Supplies (UPS), inverters, and motor drives.

This device has a pin count of 3, designed for through-hole mounting.

The IRF300P226 features an N-channel type, which is optimized for power switching applications.

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