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Infineon CoolMOS C3 N-Channel MOSFET 47 A 650 V Enhancement Mode 3-Pin TO-247 SPW47N60C3FKSA1
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Infineon |
| Height | 20.95mm |
| Length | 15.9mm |
| Model | SPW47N60C3FKSA1 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 47A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 415W |
| Typical Gate Charge Qg @ Vgs | 252nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode N-channel MOSFET offering efficient switching performance.
- Maximum continuous drain current of 47 A for high current applications.
- 650 V maximum drain-source voltage ensuring high-voltage capability.
- Low maximum drain-source resistance of 70 mΩ for reduced power loss.
- High maximum power dissipation of 415 W suitable for intensive usage.
- Three-pin TO-247 package designed for through-hole mounting.
- Wide operating temperature range from -55°C to +150°C for reliability in harsh environments.
- Typical gate charge of 252 nC enhances switching response.
Product Description
Infineon SPW47N60C3FKSA1 CoolMOS C3 Series N-Channel MOSFET is engineered for demanding power electronics applications requiring reliable high-voltage and high-current operation. Featuring a maximum continuous drain current of 47 A and a drain-source voltage rating of 650 V, this MOSFET operates in enhancement mode to offer efficient and effective switching characteristics.
Its robust power dissipation capability of 415 W supports intensive industrial uses including motor drive circuits and power management systems. The device is housed in a TO-247 package with three pins and is designed for through-hole mounting, ensuring straightforward PCB integration.
Operating reliably in severe environments, this MOSFET supports a wide temperature range from -55°C to 150°C, thereby enhancing system durability in industrial, automation, and renewable energy conversion settings. The low on-resistance of 70 mΩ reduces heat generation and increases energy efficiency.
Additional electrical parameters such as a typical gate charge of 252 nC and a gate-source voltage tolerance between -20 V and +20 V ensure safe and responsive switching. With precise physical dimensions of 20.95 mm height, 15.9 mm length, and 5.3 mm width, it suits a variety of power electronic designs.
Applications include power management for motor controls, energy conversion in renewable energy systems, and use in industrial automation requiring consistent performance. The product is made in the Philippines.
Enhancement mode N-channel configuration for improved control. High current and voltage ratings support demanding power electronics. Through-hole mounting facilitates integration into standard PCB layouts. Wide operating temperature ensures reliability in diverse environments.
Robust power dissipation capacity for high load applications. Explore the Electronics & Electricals category at EnvMart for a wide range of semiconductor devices and components designed for industrial and commercial use.
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Frequently Asked Questions
The maximum continuous drain current for this model is 47 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 650 V, ensuring high-voltage capability for demanding applications.
The typical gate charge for this model is 252 nC, which enhances its switching response.
The maximum drain-source resistance is 70 mΩ, which helps reduce power loss during operation.
It has a maximum power dissipation of 415 W, suitable for intensive usage in various applications.
This unit operates reliably within a wide temperature range from -55°C to 150°C.
The device is designed for through-hole mounting, which facilitates integration into standard PCB layouts.
The dimensions are 20.95 mm in height, 15.9 mm in length, and 5.3 mm in width.
It features an N-channel configuration, which is designed for enhancement mode operation.
This model is suitable for applications in power management for motor controls, energy conversion in renewable energy systems, and industrial automation.
The maximum gate-source voltage tolerance for this MOSFET is between -20 V and +20 V, ensuring safe operation.
This MOSFET is manufactured in the Philippines.
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