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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | SI1029X-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-89-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 300mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Typical Gate Charge Qg @ Vgs | 750nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
| Transistor Configuration | Isolated |
Vishay SI1029X-T1-GE3 Isolated TrenchFET 2 Type P, Type N-Channel MOSFET is a surface mount transistor designed for use in electronic components and power management circuits. It supports a maximum continuous drain current of 300 mA and can handle up to 60 V across the drain and source. The enhancement mode channel and isolated transistor configuration provide excellent switching characteristics and circuit protection.
Encased in a compact 6-Pin SC-89-6 surface mount package, this MOSFET is ideal for space-constrained industrial and commercial electronic assemblies. Its low gate charge of 750 nC enhances its switching speed, while the low forward voltage drop of 1.4 V ensures efficient conduction with minimal losses.
The device supports operation over a wide temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and consumer electronics applications that require reliable operation in varying thermal environments. With a maximum power dissipation of 250 mW, it suits moderate power switching and amplification tasks.
The dual P- and N-channel configuration with two elements per chip allows versatile circuit design options, optimizing component usage. Its 8 Ω maximum drain-source resistance delivers stable, consistent electrical characteristics.
Isolated transistor structure for improved circuit isolation. Surface mount 6-Pin SC-89-6 package for compact PCB layouts. Enhancement mode channel type for effective energy control. Rated for continuous drain current up to 300 mA.
Supports voltage rating of 60 V drain-source maximum. Wide temperature range operation from -55°C to 150°C. Low gate charge ensures speedy switching performance. Dual P and N channels integrated for flexible applications.
This MOSFET is widely used in industrial, electronic design, power management, and automotive circuitry where compact, efficient switching devices are required. Its high reliability and durable design offer industrial-grade performance.
Explore the extensive category of discrete semiconductors, MOSFETs, and related components on EnvMart for complementary devices and industrial electronic components suited to diverse engineering requirements.
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