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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 0.6mm
Length 1.7mm
Model SI1029X-T1-GE3
Width 1.7mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 150°C
Package Type SC-89-6
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 250mW
Typical Gate Charge Qg @ Vgs 750nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.4V
Transistor Configuration Isolated

Key Features

  • Features isolated transistor configuration that enhances circuit protection.
  • Compact 6-Pin SC-89-6 surface mount package ensures efficient PCB space usage.
  • Enhancement mode channel technology improves switching efficiency and performance.
  • Maximum power dissipation of 250 mW supports moderate power applications.
  • Operates reliably between -55°C and 150°C, suitable for harsh environments.
  • Low gate charge of 750 nC enables fast switching capabilities.
  • Forward voltage of 1.4 V ensures controlled conduction losses.
  • Designed as dual N- and P-channel MOSFET with 2 elements per chip for flexible circuit design.

Product Description

Vishay SI1029X-T1-GE3 Isolated TrenchFET 2 Type P, Type N-Channel MOSFET is a surface mount transistor designed for use in electronic components and power management circuits. It supports a maximum continuous drain current of 300 mA and can handle up to 60 V across the drain and source. The enhancement mode channel and isolated transistor configuration provide excellent switching characteristics and circuit protection.

Encased in a compact 6-Pin SC-89-6 surface mount package, this MOSFET is ideal for space-constrained industrial and commercial electronic assemblies. Its low gate charge of 750 nC enhances its switching speed, while the low forward voltage drop of 1.4 V ensures efficient conduction with minimal losses.

The device supports operation over a wide temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and consumer electronics applications that require reliable operation in varying thermal environments. With a maximum power dissipation of 250 mW, it suits moderate power switching and amplification tasks.

The dual P- and N-channel configuration with two elements per chip allows versatile circuit design options, optimizing component usage. Its 8 Ω maximum drain-source resistance delivers stable, consistent electrical characteristics.

Isolated transistor structure for improved circuit isolation. Surface mount 6-Pin SC-89-6 package for compact PCB layouts. Enhancement mode channel type for effective energy control. Rated for continuous drain current up to 300 mA.

Supports voltage rating of 60 V drain-source maximum. Wide temperature range operation from -55°C to 150°C. Low gate charge ensures speedy switching performance. Dual P and N channels integrated for flexible applications.

This MOSFET is widely used in industrial, electronic design, power management, and automotive circuitry where compact, efficient switching devices are required. Its high reliability and durable design offer industrial-grade performance.

Explore the extensive category of discrete semiconductors, MOSFETs, and related components on EnvMart for complementary devices and industrial electronic components suited to diverse engineering requirements.

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 300 mA.

It can handle a maximum drain-source voltage of 60 V.

This unit operates reliably between -55°C and 150°C.

The typical gate charge for this MOSFET is 750 nC.

It comes in a compact 6-Pin SC-89-6 surface mount package.

The forward voltage drop is 1.4 V, ensuring controlled conduction losses.

This model features 2 elements per chip, providing dual P- and N-channel configurations.

The maximum power dissipation is rated at 250 mW.

It supports a maximum gate-source voltage of -20 V to +20 V.

The maximum drain-source resistance is 8 Ω.

It features an isolated transistor configuration, enhancing circuit protection.

This product is manufactured in India.

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