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Infineon OptiMOS N-Channel MOSFET 100 A 75 V Enhancement 3-Pin TO-220 IPP100N08S2L07AKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP100N08S2L07AKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 6.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 182nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Designed with OptiMOS technology for high efficiency power switching.
- Supports a maximum continuous drain current of 100 A for robust performance.
- Maximum drain-source voltage is rated at 75 V for versatile applications.
- Enhanced channel mode for improved switching characteristics.
- Package type is TO-220 with through-hole mount for easy PCB integration.
- Maximum power dissipation of 300 W enables high power handling.
- Has a low maximum drain-source resistance of 6.8 milliohms to minimize losses.
- Operates within a wide temperature range from -55°C to 175°C for demanding environments.
Product Description
Infineon IPP100N08S2L07AKSA1 is a high-performance OptiMOS N-Channel MOSFET designed for efficient power switching and robust operation. It features a maximum continuous drain current rating of 100 A and a voltage rating of 75 V, housed in a 3-pin TO-220 package with through-hole mounting, making it ideal for various industrial and automotive electronics.
This device incorporates enhancement channel mode technology to provide excellent switching speed and low conduction losses. Its low maximum drain-source resistance of 6.8 milliohms contributes to improved energy efficiency and reliability in high current applications.
The MOSFET supports a maximum power dissipation of 300 W and is designed to operate safely over a wide temperature range from -55°C up to 175°C, ensuring dependable performance even under harsh environmental conditions.
Compliant with the automotive standard AEC-Q101, this MOSFET is suitable for automotive and industrial systems requiring stringent quality and reliability. The device’s 3-pin TO-220 package facilitates easy integration into through-hole PCBs.
OptiMOS technology for enhanced efficiency. Maximum 100 A drain current capacity. 75 V drain-source voltage rating. Low drain-source resistance of 6.8 mΩ minimizes power loss. High power dissipation capability of 300 W. Wide operating temperature from -55°C to 175°C.
Automotive standard AEC-Q101 qualification. 3-pin TO-220 through-hole package.
This MOSFET is suitable for power electronics, automotive, industrial, and control systems, where efficient switching and high reliability are required. For detailed design and application information, consult technical datasheets and design resources from Infineon.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 100 A.
This MOSFET has a maximum drain-source voltage rating of 75 V.
It is housed in a 3-pin TO-220 package designed for through-hole mounting.
The maximum power dissipation for this model is 300 W.
The maximum drain-source resistance is rated at 6.8 milliohms.
It operates within a wide temperature range from -55°C to 175°C.
This model is compliant with the automotive standard AEC-Q101.
The typical gate charge at Vgs is 182 nC.
The forward voltage for this model is 1.3 V.
This device features an N-channel type channel mode.
The enhancement channel mode improves switching characteristics and reduces conduction losses.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
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