Infineon OptiMOS N-Channel MOSFET, 15 A, 75 V Enhancement, 6-Pin MG-WDSON BSF450NE7NH3XUMA1

Infineon BSF450NE7NH3XUMA1 is an OptiMOS series N-Channel MOSFET designed for synchronous rectification and power management applications. It operates with a maximum continuous drain current of 15 A and a drain-source voltage rating of 75 V in enhancement mode. This device is housed in a compact 6-pin MG-WDSON surface mount package, facilitating space-efficient PCB layouts for industrial and commercial electronics.

With a low Rds(on) of 45 milliohms, this MOSFET delivers excellent efficiency and reduced conduction losses. The typical gate charge of 7.2 nC enables fast switching performance suitable for high-frequency circuits. It supports a maximum power dissipation of 2.5 W and withstands operating temperatures from -55°C to 150°C, proving reliable in harsh environmental conditions.

The forward voltage drop of 1.1 V contributes to lower overall power consumption during operation. Although it is not certified for automotive standards, the component is 100% avalanche tested to ensure robustness and longevity in demanding power electronics applications.

The device’s physical dimensions include a length of 5.49 mm, width of 6.35 mm, and a height of 1.1 mm, enabling integration into compact electronic assemblies. This MOSFET is ideal for use in industrial power conversion, motor control, and other manufacturing or HVAC systems where efficient power switching is critical.

This MOSFET is housed in a 6-pin MG-WDSON surface mount package for compact PCB design. The device features low maximum drain-source resistance of 45 milliohms, enabling efficient conduction. It supports a typical gate charge of 7.2 nanocoulombs at gate-source voltage.

Maximum power dissipation rating is 2.5 watts, suitable for moderate power applications. Operating temperature range spans from -55°C minimum to 150°C maximum, ensuring robustness in varied environments. Forward voltage drop is 1.1 volts, contributing to reduced power loss in switching applications.

This component does not have specific automotive certification but is 100% avalanche tested for reliability. Its dimensions include a length of 5.49 mm, width of 6.35 mm, and height of 1.1 mm, optimizing board space. Explore more MOSFETs and semiconductor components at EnvMart for your electronics design and manufacturing needs.