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Infineon Digital Transistor 100 mA NPN 50 V 6-Pin SOT-363 BCR108SH6327XTSA1

Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.8mm
Length 2mm
Model BCR108SH6327XTSA1
Width 1.25mm
Mount Type Surface
Series BCR108
Maximum Operating Temperature 150°C
Package Type SOT-363 (SC-88)
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 170MHz

Key Features

  • Operates at a maximum power dissipation of 250 mW.
  • Surface mount package SOT-363 with 6 pins.
  • Minimum DC current gain (hFE) of 70 ensures efficient amplification.
  • Maximum transition frequency of 170 MHz for high-speed switching.
  • Maximum operating temperature up to 150°C.
  • Isolated transistor configuration optimized for digital switching applications.
  • Suitable for direct drive from digital sources due to integrated resistors.
  • Dual resistor digital transistor design integrates bias resistors internally.

Product Description

Infineon BCR108SH6327XTSA1 Digital Transistor is a high-performance NPN bipolar transistor designed for digital switching and amplification with integrated resistors allowing direct interfacing with digital circuits.

This device supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V, making it suitable for various low power switching and amplification tasks in electronic circuits.

It comes in a compact surface-mount SOT-363 package with 6 pins, featuring a transistor configuration that is isolated, which helps in reducing interference and crosstalk in complex circuit designs.

The minimum DC current gain (hFE) of 70, combined with a high transition frequency of 170 MHz, enables efficient frequency response and switching speed for modern electronic devices.

The transistor supports an operating temperature up to 150°C, ensuring robust operation under demanding environmental conditions.

Its compact physical dimensions (2 mm length, 1.25 mm width, 0.8 mm height) facilitate PCB space saving, ideal for dense assembly electronics such as mobile devices, industrial control units, and communication equipment.

As a dual resistor digital transistor, it contains integrated bias resistors, allowing it to be driven directly from microcontroller output pins or other digital signals without external resistor networks, simplifying circuit design and reducing component count.

Operates at a maximum power dissipation of 250 mW for reliable operation in compact circuits. Integrated resistors improve circuit integration and performance. Widely used in digital switching, signal amplification, and interfacing applications.

This product is ideal for electronic, industrial automation, and manufacturing applications requiring compact, reliable digital transistors with integrated biasing. Explore more digital transistor variants and semiconductor components at EnvMart for comprehensive industrial and electronic solutions.

Explore more products in our Discrete Semiconductor category.

Infineon Digital Transistor 100 mA NPN 50 V 6-Pin SOT-363 BCR108SH6327XTSA1
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector-emitter voltage rating of 50 V.

This digital transistor operates at a maximum power dissipation of 250 mW.

It comes in a surface mount SOT-363 package with 6 pins.

The minimum DC current gain (hFE) is 70, ensuring efficient amplification.

The maximum transition frequency is 170 MHz, suitable for high-speed switching applications.

It can operate at a maximum temperature of 150°C.

The dimensions are 2 mm in length, 1.25 mm in width, and 0.8 mm in height.

It features an isolated transistor configuration, which helps reduce interference and crosstalk in circuits.

This model is widely used in digital switching, signal amplification, and interfacing applications.

The country of origin for this digital transistor is India.

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