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Vishay E Series N-Channel MOSFET, 7 A, 800 V, Enhancement Mode, 3-Pin TO-220 SIHA17N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.3mm |
| Length | 28.1mm |
| Model | SIHA17N80AE-GE3 |
| Width | 9.7mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 34W |
| Typical Gate Charge Qg @ Vgs | 62nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates in enhancement mode for efficient switching performance.
- Maximum power dissipation of 34 watts supports high power usage.
- Typical gate charge of 62 nC promotes fast switching speeds.
- Robust operating temperature range from -55°C to 150°C enables reliable operation in harsh environments.
- Low Rds(on) of 250 milliohms minimizes conduction losses.
- Constructed with through-hole mounting in a thin-lead TO-220 FULLPAK package.
- Maximum gate-source voltage rating of ±30 V ensures device safety under voltage spikes.
- Forward voltage drop of 1.2 V reduces power loss during conduction.
Product Description
Vishay SIHA17N80AE-GE3 is an N-Channel MOSFET from the E Series designed for power applications requiring a continuous drain current of 7 amperes and a drain-source voltage rating of 800 volts. Encapsulated in a thin-lead TO-220 FULLPAK 3-pin package with through-hole mounting, this device supports efficient switching in electronic circuits.
The enhancement mode MOSFET features a low figure-of-merit (FOM) with a drain-source resistance of 250 milliohms combined with a typical gate charge of 62 nanocoulombs, which reduces switching and conduction losses. The device is avalanche energy rated (Unclamped Inductive Switching), suitable for industrial applications with transient voltage surges.
Operating temperature specifications range from -55°C to a maximum of 150°C, making it suitable for demanding environments in industrial, automotive, and power management settings. Its maximum power dissipation of 34 watts ensures sustained reliability under load.
Key electrical parameters include a maximum gate-source voltage of ±30 volts and a forward voltage of 1.2 volts. The compact component size with a length of 28.1 mm, width of 9.7 mm, and height of 4.3 mm allows integration into space-constrained printed circuit boards (PCBs).
Operates in enhancement mode for efficient switching performance. Maximum power dissipation of 34 watts supports high power usage. Typical gate charge of 62 nC promotes fast switching speeds. Robust operating temperature range from -55°C to 150°C enables reliable operation in harsh environments.
Low drain-source resistance of 250 milliohms minimizes conduction losses. Through-hole mounting with a TO-220 FULLPAK 3-pin package design. Maximum gate-source voltage rating of ±30 V ensures device safety under voltage spikes.
Forward voltage drop of 1.2 V reduces power loss during conduction. Compact device dimensions facilitate PCB integration.
This Vishay E Series MOSFET is suited for applications in industrial electronics, power supplies, motor control, automotive electronics, and other discrete semiconductor use cases. Its reliable performance under thermal and electrical stress supports diverse manufacturing and engineering projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 amperes.
This N-channel MOSFET has a maximum drain-source voltage rating of 800 volts.
The typical gate charge for this device is 62 nanocoulombs.
It has a maximum power dissipation of 34 watts.
The operating temperature range for this unit is from -55°C to 150°C.
The forward voltage drop for this MOSFET is 1.2 volts.
This model utilizes through-hole mounting in a TO-220 FULLPAK package.
The dimensions of this unit are 28.1 mm in length, 9.7 mm in width, and 4.3 mm in height.
The maximum gate-source voltage rating for this model is ±30 volts.
The maximum drain-source resistance for this device is 250 milliohms.
This MOSFET is suitable for applications in industrial electronics, power supplies, motor control, and automotive electronics.
This model features an N-channel configuration, operating in enhancement mode.
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