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Vishay N-Channel MOSFET 266 A Maximum Continuous Drain Current 40 V Maximum Drain Source Voltage SO-8 Package SQJ140EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SQJ140EP-T1_GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | SQJ140EP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 266A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 88W |
| Typical Gate Charge Qg @ Vgs | 49.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device operates in enhancement mode for efficient power switching.
- Maximum power dissipation is rated at 88 W for reliable thermal management.
- The MOSFET supports a maximum gate-source voltage of 20 V to ensure stable gate control.
- It features a low maximum drain-source resistance of 1.7 milliohm for minimal conduction losses.
- Temperature operating range is from -55°C to 150°C for broad industrial compatibility.
- The compact PowerPAK SO-8L package dimensions are length 6.25 mm, width 5.26 mm, and height 1.12 mm.
- Typical gate charge is 49.2 nC at specified gate voltage for optimized switching performance.
- The device is 100% Rg and UIS tested to ensure high reliability in automotive and industrial applications.
Product Description
Vishay SQJ140EP-T1_GE3 N-Channel MOSFET delivers a maximum continuous drain current of 266 A and supports a maximum drain-source voltage of 40 V, housed in a compact SO-8 PowerPAK package. This enhancement mode MOSFET is designed for high-efficiency power conversion and switching applications.
Featuring a low drain-source resistance of 1.7 mΩ, it reduces power losses and heat generation, making it suitable for demanding industrial and automotive electronic systems with operating temperatures from -55°C to 150°C. With a maximum power dissipation of 88 W, the device ensures robust performance under heavy electrical loads.
The MOSFET supports a gate-source voltage of 20 V and has a typical gate charge of 49.2 nC, optimizing switching speed and energy efficiency. Its compact dimensions (6.25 mm length, 5.26 mm width, 1.12 mm height) allow space-efficient PCB layouts.
This PowerPAK SO-8L packaged MOSFET has been tested for ruggedness and reliability, including 100% Rg and Ultra-Interrupted Switching (UIS) tests, qualifying it for automotive industry standards despite its non-automotive designation. It is ideal for power management in industrial, automotive, HVAC, and manufacturing applications.
The device operates in enhancement mode for efficient power switching. Maximum power dissipation is rated at 88 W for reliable thermal management. The MOSFET supports a maximum gate-source voltage of 20 V to ensure stable gate control.
It features a low maximum drain-source resistance of 1.7 milliohm for minimal conduction losses. Temperature operating range is from -55°C to 150°C for broad industrial compatibility. The compact PowerPAK SO-8L package dimensions are length 6.25 mm, width 5.26 mm, and height 1.12 mm.
Typical gate charge is 49.2 nC at specified gate voltage for optimized switching performance. The device is 100% Rg and UIS tested to ensure high reliability in automotive and industrial applications.
Select this Vishay MOSFET for critical power semiconductor applications requiring high current capacity, low losses, and compact packaging. Explore more semiconductors and power components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay SQJ140EP-T1_GE3 is 266 A.
This model supports a maximum drain-source voltage of 40 V.
The maximum power dissipation for this device is rated at 88 W.
The dimensions of the SO-8 package are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
The typical gate charge at the specified gate voltage is 49.2 nC.
This MOSFET supports a maximum gate-source voltage of 20 V.
It features a low maximum drain-source resistance of 1.7 milliohm.
The operating temperature range is from -55°C to 150°C.
This model uses surface mounting.
The MOSFET has a pin count of 4.
It is an N-channel MOSFET.
This MOSFET is suitable for power management in industrial, automotive, HVAC, and manufacturing applications.
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