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Vishay SiDR392DP N-Channel MOSFET, 100 A, 30 V, Enhancement Mode, 8-Pin SO-8 SIDR392DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SIDR392DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiDR392DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.62mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 188nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This enhancement mode MOSFET offers a maximum power dissipation of 125 W.
- Its trenchFET Gen IV design optimizes gate charge and switching performance.
- Includes a top side cooling feature for improved thermal transfer.
- Has a very low maximum drain source resistance of 0.62 milliohms.
- Operates within a temperature range from -55°C to 150°C.
- Typical gate charge at Vgs is 188 nanocoulombs, enabling efficient switching.
- Maximum gate source voltage is rated at 20 V.
- Forward voltage drop is nominally 1.1 V for efficient conduction.
Product Description
The Vishay SIDR392DP-T1-RE3 is a high-performance N-Channel MOSFET designed for robust power switching applications, supporting a maximum continuous drain current of 100 A and a drain source voltage rating of 30 V.
Featuring an enhancement mode operation and trenchFET Gen IV technology, this MOSFET provides superior switching efficiency with optimized gate charge (Qg), gate drain charge (Qgd), and an improved Qgd/Qgs ratio, reducing switching power losses effectively.
The device incorporates a top side cooling architecture, enhancing thermal dissipation capability which is critical in high-power industrial applications such as power management circuits, automotive electronics, and other electronic control systems.
This MOSFET is housed in a compact 8-pin SO-8 surface mount package, measuring 6.15 mm in length and 5.15 mm in width, suitable for dense PCB layouts. Operating temperature range extends from -55°C to 150°C, ensuring reliable performance in harsh environments.
Electrical characteristics include a maximum power dissipation of 125 W and a very low on-resistance of 0.62 milliohms, minimizing conduction losses and heat generation during operation.
The gate source voltage maximum rating is 20 V, and the forward voltage drop of approximately 1.1 V supports efficient conduction. This product is 100% tested for gate resistance and Unclamped Inductive Switching (UIS) to ensure quality and reliability.
The Vishay SIDR392DP-T1-RE3 MOSFET is ideal for industrial, automotive, power supply, and manufacturing applications requiring efficient power switching. Discover the comprehensive Vishay MOSFET range at EnvMart for bulk industrial and laboratory needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 100 A.
The maximum drain source voltage rating is 30 V.
It has a maximum power dissipation of 125 W.
The maximum drain source resistance is 0.62 milliohms, minimizing conduction losses.
The typical gate charge at Vgs is 188 nanocoulombs.
The maximum gate source voltage is rated at 20 V.
The package measures 6.15 mm in length and 5.15 mm in width.
It operates within a temperature range from -55°C to 150°C.
This model features a surface mount design.
It is suitable for power management circuits, automotive electronics, and electronic control systems.
The forward voltage drop is nominally 1.1 V, supporting efficient conduction.
Yes, it is 100% tested for gate resistance and Unclamped Inductive Switching (UIS).
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