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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 4.9mm |
| Model | SQJ264EP-T1_GE3 |
| Width | 4.37mm |
| Mount Type | Surface |
| Series | SQJ264EP |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 54A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 9.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.82V |
| Transistor Configuration | Dual |
The Vishay SQJ264EP-T1_GE3 is a dual N-Channel enhancement mode MOSFET designed specifically for high-efficiency power management and switching applications. It is housed in a compact SO-8 6-pin surface mount package, making it suitable for dense circuit board layouts.
This device can continuously handle drain currents up to 54 A, making it ideal for high current loads, with a maximum drain-source voltage rating of 60 V. The low maximum drain-source resistance of 20 milliohms minimizes conduction losses, improving system efficiency and thermal performance.
With a maximum power dissipation of 48 W and a wide operating temperature range (-55 °C to 175 °C), this MOSFET is engineered to meet stringent automotive requirements, being AEC-Q101 qualified. This qualification underlines its durability and reliability in automotive environments.
The device features a dual transistor configuration with two elements per chip, which enhances performance in synchronous buck converters and power supply circuits. Its low gate charge of 9.2 nC ensures fast switching and reduced switching losses.
Typical applications include power management in automotive electronics, industrial automation systems, and other harsh environment devices requiring robust semiconductor components.
Maximum continuous drain current: 54 A. Maximum drain-source voltage: 60 V. Package type: SO-8 6-Pin surface mount. Drain-source resistance: 20 mΩ maximum. Operating temperature range: -55 °C to 175 °C. Automotive qualified to AEC-Q101 standard.
Dual transistor elements per chip for enhanced performance. Gate charge: 9.2 nC typical. Power dissipation: 48 W maximum. Forward voltage drop: 0.82 V.
Choose Vishay SQJ264EP-T1_GE3 MOSFETs for high-performance, reliable power switching in automotive, industrial, and other demanding environments. Browse more high-quality semiconductors in the MOSFET category at EnvMart.
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