Vishay Power N-Channel MOSFET 11 A, 600 V Enhancement Mode, 3-Pin TO-220 SIHA125N60EF-GE3

Vishay SIHA125N60EF-GE3 is a high-performance Power MOSFET designed as an N-Channel enhancement mode transistor with a maximum continuous drain current of 11 A and a drain-source voltage rating of 600 V. Packaged in a durable 3-pin TO-220 through-hole configuration, this device is tailored for demanding power applications requiring efficient switching.

Incorporating 4th generation E series technology, this MOSFET benefits from reduced switching and conduction losses, resulting in improved energy efficiency in power management circuits. The device exhibits a low figure-of-merit (FOM) combining on-resistance and gate charge, optimizing performance for high-frequency switching tasks.

Capable of dissipating up to 179 W of power, the device operates reliably within a broad temperature range from -55°C up to 150°C, making it suitable for industrial and commercial electronic environments. The typical gate charge is 31 nC at Vgs, with a maximum allowable gate-source voltage of 30 V, ensuring precise control and protection during operation.

The maximum drain-source on-resistance is 125 mΩ, delivering minimal conduction losses while maintaining robust current handling capabilities. The MOSFET features a forward voltage drop of 1.2 V, enhancing overall system efficiency.

With package dimensions of 28.1 mm length, 9.7 mm width, and 4.3 mm height, it fits standard TO-220 mounting requirements. This MOSFET is ideal for use in power electronic designs including power supplies, motor drives, and converters in industrial, laboratory, and manufacturing contexts.

Employs 4th generation E series technology for efficient switching and conduction. Designed with low figure-of-merit (FOM) Ron x Qg for reduced losses. Supports enhancement mode channel with 3-pin TO-220 through-hole mounting.

Can dissipate maximum power of 179 W for high-performance applications. Operates reliably from -55°C to 150°C operating temperature range. Features a typical gate charge of 31 nC and maximum gate-source voltage of 30 V. Maximum drain-source resistance is 125 mΩ ensuring robust conduction.

Forward voltage drop of 1.2 V contributes to energy efficiency. Physical dimensions: length 28.1 mm, width 9.7 mm, and height 4.3 mm. Ideal for industrial, power electronics, and high-voltage switching applications. Browse more from the Vishay Power MOSFET range and related components for comprehensive electronic solutions on EnvMart.