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onsemi UltraFET N-Channel MOSFET, 48 A, 80 V Enhancement Mode, 8-Pin WDFN FDMS3572
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 5mm |
| Model | FDMS3572 |
| Width | 6mm |
| Mount Type | Surface |
| Series | UltraFET |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 48A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 29mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- Offers an enhancement mode channel for efficient switching applications.
- Features low drain-source resistance of 29 milliohms to reduce power loss.
- Supports a maximum gate-source voltage range from -20 V to +20 V.
- Capable of dissipating 78 W maximum power enhancing thermal performance.
- Designed for operation in temperatures from -55°C up to 150°C.
- Typical gate charge is low at 28 nC, optimizing switching speed.
- Compact dimensions of 5 mm length, 6 mm width, and 0.75 mm height facilitate PCB space saving.
- Surface-mount WDFN package type provides reliable mounting and heat dissipation.
Product Description
onsemi FDMS3572 UltraFET N-Channel MOSFET is a high-performance 8-Pin WDFN surface mount device designed for efficient power management in electronics. It supports a maximum continuous drain current of 48 A with an 80 V drain-source voltage, making it suitable for demanding switching and power conversion applications.
This enhancement mode MOSFET features a low on-resistance of 29 milliohms, contributing to minimal conduction losses and enhanced energy efficiency. The device’s maximum power dissipation rating is 78 W, enabling operation under high thermal stress conditions.
The FDMS3572 operates effectively across a wide temperature range from -55°C to 150°C, ensuring reliability in harsh industrial and commercial environments. Its typical gate charge of 28 nC supports high-frequency switching with low gate drive power requirements.
Its compact WDFN package with dimensions of 5 mm by 6 mm by 0.75 mm allows for optimized PCB layout and heat dissipation. The device is used widely in high-frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management circuits.
Enhancement mode N-channel MOSFET with 48 A drain current capacity. 80 V maximum drain-source voltage rating. Low Rds(on) of 29 milliohms for efficient power conversion. Wide operating temperature range supporting industrial use cases.
Compact 8-pin WDFN surface mount package for space-saving design. Optimized for automotive, industrial, and commercial power management applications. Typical gate charge of 28 nC allows high-speed switching. Maximum power dissipation rating of 78 W enhances thermal robustness.
This product is ideal for industrial electronics, automotive control systems, HVAC equipment, manufacturing automation, and laboratory power supplies. It combines high efficiency with reliability and compact form factor, making it a versatile solution for advanced power management architectures.
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Frequently Asked Questions
The FDMS3572 can handle a maximum continuous drain current of 48 A.
This model supports a maximum drain-source voltage rating of 80 V.
The on-resistance (Rds(on)) of this unit is 29 milliohms, which helps reduce conduction losses.
The typical gate charge for this MOSFET is 28 nC, optimizing its switching speed.
It has compact dimensions of 5 mm in length, 6 mm in width, and 0.75 mm in height.
The maximum power dissipation rating is 78 W, enhancing its thermal performance.
This MOSFET operates effectively within a temperature range of -55°C to 150°C.
It comes in an 8-pin WDFN surface mount package, which facilitates reliable mounting and heat dissipation.
The FDMS3572 supports a maximum gate-source voltage range from -20 V to +20 V.
This model is widely used in high-frequency DC to DC converters, switching regulators, and motor drivers.
It is an enhancement mode N-channel MOSFET, designed for efficient power management.
The forward voltage (Vf) for this model is 0.8 V.
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